IRFHM9331TRPBF

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IRFHM9331TRPBF

MOSFET P-CH 30V 11A/24A PQFN

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series HEXFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 11A (Ta), 24A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V, 20V
RdsOn(Max)@IdVgs 10mOhm @ 11A, 20V
Vgs(th)(Max)@Id 2.4V @ 25µA
GateCharge(Qg)(Max)@Vgs 48 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1543 pF @ 25 V
PowerDissipation(Max) 2.8W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PQFN (3x3)

Vue d'ensemble

Description

IRFHM9331TRPBF is a high-performance N-channel MOSFET, designed for use in various power management applications. It is characterized by its low on-resistance, high-speed switching capabilities, and high thermal stability, making it suitable for DC-DC converters, power supplies, and motor control circuits. The device features a maximum drain-source voltage (VDS) and a high continuous drain current (ID), allowing it to effectively handle significant power loads. Its compact packaging aids in efficient thermal management and integration into various electronic circuits. Overall, the IRFHM9331TRPBF is a reliable choice for engineers seeking efficiency and performance in their designs.

Features

The IRFHM9331TRPBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain currents up to 60A, allowing it to drive high loads.
3. RDS(on): It offers a low on-resistance value (typically around 0.025Ω), which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges typically from 1V to 2V, enabling efficient switching with low gate drive voltages.
5. Package: Housed in a DPAK package, it provides good thermal performance and ease of mounting.
6. Applications: Suitable for use in power management, motor control, and switching applications.
Overall, the IRFHM9331TRPBF is optimized for efficiency and performance in a compact form factor, making it an excellent choice for various electronic projects.

Package

The IRFHM9331TRPBF is packaged in a SOIC-8 (Small Outline Integrated Circuit) package type. This surface-mount package is designed for efficient thermal dissipation and space-saving applications in electronic circuits.

Pinout

The IRFHM9331TRPBF is a N-channel MOSFET with a total of 4 pins. Its primary functions include:
1. Gate (G): This pin controls the MOSFET, allowing it to turn on or off by applying a voltage.
2. Drain (D): This pin is where the current exits the MOSFET when it is in the 'on' state.
3. Source (S): This pin is connected to the ground or negative power supply and is where the current enters the MOSFET.
The IRFHM9331TRPBF is designed for applications such as power management, switching regulators, and motor control, offering low on-resistance and fast switching capabilities. It is important to consult the specific datasheet for detailed electrical characteristics and application guidelines.

Manufacturer

The IRFHM9331TRPBF is manufactured by Infineon Technologies AG, a leading global semiconductor company based in Germany. Infineon specializes in providing a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovation in power management, efficiency, and reliability, offering products such as MOSFETs, microcontrollers, and sensors. Infineon plays a significant role in advancing technologies related to energy efficiency and smart mobility, contributing to developments in electric vehicles and renewable energy systems.

Application

The IRFHM9331TRPBF is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and load switching. Its low on-resistance and fast switching capabilities make it suitable for efficient power applications in consumer electronics, automotive systems, and renewable energy solutions like solar inverters.

Equivalent

The IRFHM9331TRPBF is an N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000, depending on the specific application requirements such as voltage, current ratings, and package type. Always verify specifications like Rds(on), Vgs(th), and Id to ensure compatibility for your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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