IRFHM830TRPBF

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IRFHM830TRPBF

MOSFET N-CH 30V 21A/40A PQFN

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Spécifications

Series HEXFET®
Part Status Obsolete
Base Product Number IRFHM830
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2155 pF @ 25 V
Power Dissipation (Max) 2.7W (Ta), 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN-Dual (3.3x3.3)
Package 8-PowerVDFN
Packaging Cut Tape (CT), Tape & Reel (TR)

Vue d'ensemble

Description

IRFHM830TRPBF is a specific model of an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by International Rectifier, a subsidiary of Infineon Technologies. This particular MOSFET is designed for high-efficiency switching applications, such as power management and amplification in electronic circuits.
Key features include a low on-resistance, which minimizes power loss and heat generation during operation, and a high breakdown voltage, making it suitable for various power applications. The "TR" in the part number indicates that it is available in a tape and reel packaging, making it convenient for automated assembly processes.
Overall, IRFHM830TRPBF is utilized in applications such as DC-DC converters, motor drivers, and other power electronics where reliability and efficiency are critical.

Features

The IRFHM830TRPBF is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (Id) of up to 50A, making it ideal for high current applications.
3. Rds(on): It features a low on-resistance of around 8 mΩ, which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 1V to 2.5V, allowing for easy drive with low voltage logic.
5. Package: It comes in a TO-220 package, which aids in heat dissipation and makes it suitable for various thermal management designs.
6. Fast Switching: Optimized for fast switching speeds, it is well-suited for applications in power supplies, motor controls, and DC-DC converters.
These characteristics make the IRFHM830TRPBF an excellent choice for power management in electronic circuits.

Package

The IRFHM830TRPBF is packaged in a TO-220 style casing. This package type is designed for power semiconductor devices, offering efficient thermal management and convenient mounting options for applications requiring high power handling.

Pinout

The IRFHM830TRPBF is an N-channel MOSFET with a package type of SOIC-8, which has a pin count of 8.
Pin Functions:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal through which the current flows out.
3. Source (S) - The terminal through which the current flows into the MOSFET.
4. Body Diode (D1) - Integrated body diode providing reverse current capability.
5. Drain (D) - Additional drain connection.
6. Source (S) - Additional source connection.
7. Gate (G) - Additional gate connection.
8. GND (Ground) - Common ground connection.
This configuration allows for efficient control of high current and voltage applications, making it suitable for power management and switching applications. The IRFHM830TRPBF is characterized by low on-resistance and high-speed switching capabilities.

Manufacturer

The manufacturer of the IRFHM830TRPBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in power management, automotive electronics, and security technologies. Infineon plays a significant role in the development of innovative semiconductor devices that enhance energy efficiency and performance across multiple industries.

Application

The IRFHM830TRPBF is an N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor control, power supplies, and switching applications in consumer electronics. It is suitable for low-voltage, high-current environments due to its efficient switching characteristics and thermal performance, making it ideal for automotive, industrial, and renewable energy systems.

Equivalent

The IRFHM830TRPBF is an N-channel MOSFET. Equivalent products include the STP16NF06, BSS138, and AOD4184. However, ensure to check specific parameters like voltage, current ratings, and package types to confirm compatibility for your application. Always refer to the datasheets for detailed specifications.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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