IRFH7914TRPBF

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IRFH7914TRPBF

MOSFET N-CH 30V 15A/35A 8PQFN

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 15A (Ta), 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 8.7mOhm @ 14A, 10V
Vgs(th)(Max)@Id 2.35V @ 25µA
GateCharge(Qg)(Max)@Vgs 12 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1160 pF @ 15 V
PowerDissipation(Max) 3.1W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-PQFN (5x6)

Vue d'ensemble

Description

IRFH7914TRPBF is a part of the International Rectifier's family of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) designed for high-efficiency power management applications. This specific model is often utilized in switching power supplies, DC-DC converters, and motor control systems due to its low on-resistance and fast switching capabilities.
Key features include:
- Voltage Rating: Typically rated for high voltage applications, making it suitable for various industrial and consumer electronics.
- Low RDS(on): Ensures minimal power loss during operation, enhancing energy efficiency.
- Thermal Performance: Designed with considerations for heat dissipation, allowing for reliable performance under load.
These characteristics make IRFH7914TRPBF an ideal choice for applications requiring robust and efficient power handling. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Features

The IRFH7914TRPBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power management tasks.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 70A, allowing for efficient power switching.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)), typically around 6.5 mΩ, ensuring minimal power loss during operation and enhancing thermal performance.
4. Fast Switching: The device supports high-speed switching, beneficial for applications in DC-DC converters and motor drivers.
5. Package: It is available in a DPAK package, which provides good thermal performance and ease of mounting.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, typically around 2-4V, facilitating operation with standard logic levels.
These features make the IRFH7914TRPBF ideal for automotive, industrial, and telecommunications applications.

Package

The IRFH7914TRPBF is packaged in a TO-220 package type, which is a metal tab package designed for efficient heat dissipation and suitable for power applications.

Pinout

The IRFH7914TRPBF is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET operation; applying a voltage here allows current to flow from the drain to the source.

2. Drain (D) - The terminal through which the current exits the device; connected to the load.
3. Source (S) - The terminal through which current enters the device; typically connected to ground or a lower potential in a circuit.
This MOSFET is designed for high-efficiency applications, primarily in power management, and features low on-resistance and fast switching speeds.

Manufacturer

The IRFH7914TRPBF is manufactured by Infineon Technologies, a global semiconductor manufacturer. Infineon specializes in developing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovations in power semiconductors, enabling energy-efficient systems. Infineon operates in various markets, such as automotive, industrial electronics, and the Internet of Things (IoT), and is recognized for its commitment to sustainability and technology advancement.

Application

The IRFH7914TRPBF is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and high-frequency switching. Its low RDS(on) and fast switching capabilities make it suitable for automotive, industrial, and consumer electronic devices, enhancing efficiency in power systems.

Equivalent

The IRFH7914TRPBF is a N-channel MOSFET commonly used in power applications. Equivalent products include the STP16NF06, BSS139, and FDS6910. However, always check the specific electrical characteristics and package compatibility for your application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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