IRFH5300TRPBF

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IRFH5300TRPBF

MOSFET N-CH 30V 40A/100A 8PQFN

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 40A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.4mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2.35V @ 150µA
GateCharge(Qg)(Max)@Vgs 120 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 7200 pF @ 15 V
PowerDissipation(Max) 3.6W (Ta), 250W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-PQFN (5x6)

Vue d'ensemble

Description

IRFH5300TRPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power management applications. It features a low on-resistance, allowing for efficient power conversion and minimal heat generation during operation. The device typically operates at high switching speeds, making it suitable for applications like DC-DC converters, power supplies, and motor control.
IRFH5300TRPBF is characterized by its high voltage and current ratings, which enable it to handle significant power loads. It is packaged in a surface-mount format, facilitating easy integration into compact electronic designs. The device is also RoHS compliant, indicating it meets environmental regulations regarding hazardous substances.
Overall, IRFH5300TRPBF is an ideal choice for engineers looking to enhance the efficiency and reliability of their electronic systems.

Features

The IRFH5300TRPBF is an N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to moderate voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 50A, enabling it to manage significant loads.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)) value, typically around 5.5mΩ, which minimizes power loss and improves efficiency during operation.
4. Fast Switching: The MOSFET supports fast switching speeds, ideal for applications in switching power supplies and motor drivers.
5. Thermal Performance: It has a high thermal conductivity package, allowing for better heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, facilitating easy drive requirements with standard logic levels.
These features make the IRFH5300TRPBF suitable for applications in automotive, industrial, and consumer electronics.

Package

The IRFH5300TRPBF is typically packaged in a DPAK (also known as TO-252) package type. This surface-mount package is designed for power applications, providing efficient thermal dissipation and ease of integration into circuit boards.

Pinout

The IRFH5300TRPBF is an N-channel MOSFET with a total of 6 pins. The pin configuration is as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the current flows out of the device.
3. Source (S) - The terminal through which the current flows into the device.
4. Tab - Typically connected to the source for heat dissipation and can be used for mounting.
The IRFH5300TRPBF is designed for high-speed switching applications and is commonly used in power management and conversion, such as in DC-DC converters and power supplies. Its features include low on-resistance and high current capability, making it suitable for various power applications.

Manufacturer

The IRFH5300TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. Infineon is known for its focus on power management, connectivity, and security technologies, catering to a wide range of industries with products that enable energy efficiency and enhanced performance. The company is a key player in the semiconductor market, dedicated to innovation and sustainability.

Application

The IRFH5300TRPBF is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, load switching, and motor control. Its low on-resistance and high-speed switching capabilities make it suitable for consumer electronics, automotive systems, and industrial automation. Additionally, it can be utilized in power supplies and renewable energy systems for efficient energy conversion.

Equivalent

The IRFH5300TRPBF is a N-channel MOSFET primarily used in power applications. Equivalent products include the STP16NF06, BSS139, and FQP30N06L. Always verify specifications like voltage, current ratings, and package type before substitution to ensure compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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