IRFH5210TRPBF

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IRFH5210TRPBF

MOSFET N-CH 100V 10A/55A 8PQFN

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 10A (Ta), 55A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 14.9mOhm @ 33A, 10V
Vgs(th)(Max)@Id 4V @ 100µA
GateCharge(Qg)(Max)@Vgs 59 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2570 pF @ 25 V
PowerDissipation(Max) 3.6W (Ta), 104W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-PQFN (5x6)

Vue d'ensemble

Description

IRFH5210TRPBF is a specific type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. This component is characterized by its low on-resistance, high-speed switching capabilities, and enhanced thermal performance, making it suitable for power management, DC-DC converters, and inverter circuits. The "IR" prefix indicates it's part of International Rectifier’s product line, known for robust semiconductor solutions. The "TRPBF" suffix signifies that the part is RoHS-compliant, meaning it is free from hazardous substances, aligning with environmental regulations. Its compact package design allows for efficient thermal dissipation and ease of integration into various electronic circuits. Overall, IRFH5210TRPBF is favored in applications requiring reliability and efficiency in power delivery.

Features

The IRFH5210TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for a wide range of applications.
2. Current Rating: The continuous drain current (I_D) is rated at 100A, enabling it to handle significant load demands.
3. R_DS(on): It offers a low on-resistance of approximately 9.5 mΩ at V_GS = 10V, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient switching.
5. Package: It comes in a TO-220 package, which facilitates heat dissipation and is compatible with various mounting technologies.
6. Applications: Ideal for use in power supplies, motor control, and other high-frequency applications.
Overall, the IRFH5210TRPBF is an effective choice for designers looking for high performance in power electronics.

Package

The IRFH5210TRPBF is packaged in a DPAK (TO-252) package type. This surface-mount package is designed for high-power applications, offering efficient thermal performance and ease of handling.

Pinout

The IRFH5210TRPBF is an N-channel MOSFET with a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET's operation by regulating the voltage applied.
2. Drain (D) - The terminal through which the current flows out when the MOSFET is on.
3. Source (S) - The terminal through which the current enters when the MOSFET is on.
4-8. Additional Pins - These typically include various connections for thermal and electrical performance, depending on the package type.
The IRFH5210TRPBF is designed for high-speed switching applications in power management and is commonly used in DC-DC converters, power supplies, and motor control systems. It features low on-resistance and high-speed switching capabilities, making it suitable for efficient power applications.

Manufacturer

The IRFH5210TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in power semiconductors, microcontrollers, and sensors for various applications including automotive, industrial, and consumer electronics. The company is known for its innovation in power management and efficiency solutions, catering to the growing demand for energy-efficient technologies. Infineon plays a significant role in the development of semiconductor technologies that support sustainable energy and smart mobility.

Application

The IRFH5210TRPBF is a N-channel MOSFET commonly used in power management applications. Its applications include DC-DC converters, power supplies, motor control, and load switching in consumer electronics, industrial equipment, and automotive systems. Its low on-resistance and high efficiency make it suitable for diverse power applications, enhancing performance and energy efficiency.

Equivalent

The IRFH5210TRPBF is a N-channel MOSFET. Equivalent products include the STP75NF75, FQP75N75, and BUK9565-55. Always confirm specifications like voltage, current rating, and package type before substituting components.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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