IRFH5110TRPBF

Les images sont à titre de référence seulement

IRFH5110TRPBF

MOSFET N-CH 100V 11A/63A 8PQFN

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3152 pF @ 25 V
Power Dissipation (Max) 3.6W (Ta), 114W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerVDFN
Base Product Number IRFH5110

Vue d'ensemble

Description

IRFH5110TRPBF is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features low on-resistance, which minimizes power loss and heat generation during operation, making it suitable for use in power supplies, DC-DC converters, and motor control circuits. The device is packaged in a compact, surface-mount format, which aids in space-saving designs and eases thermal management. Its fast switching speeds make it ideal for applications requiring rapid response times. The IRFH5110TRPBF is commonly used in consumer electronics, automotive applications, and industrial equipment, where reliable performance and efficiency are paramount. Additionally, it has specified voltage and current ratings that define its operational limits, ensuring safe and effective use in various electronic circuits.

Features

The IRFH5110TRPBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, suitable for various high-voltage applications.
2. Current Rating: It can handle a continuous drain current (ID) of up to 110A, allowing it to drive high loads.
3. RDS(on): The on-resistance (RDS(on)) is low, typically around 5.3 mΩ at VGS of 10V, which helps minimize power losses during operation.
4. Fast Switching: Offers quick switching speeds, making it ideal for applications requiring high-frequency operation.
5. Thermal Performance: Equipped with a low thermal resistance, enhancing its performance in demanding thermal conditions.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
These features make the IRFH5110TRPBF suitable for a wide range of applications including power supplies, motor control, and DC-DC converters.

Package

The IRFH5110TRPBF is packaged in a TO-220 format. This package type is known for its thermal performance and suitability for high-power applications, allowing for efficient heat dissipation.

Pinout

The IRFH5110TRPBF is a N-channel MOSFET with a pin count of 5. The pins serve the following functions:
1. Gate (G) - Controls the MOSFET's switching behavior.
2. Drain (D) - The terminal through which the current exits the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
4. Body Diode (integrated) - Provides a path for current when the MOSFET is off and can handle reverse current.
5. Tab (Thermal) - Often connected to the source for heat dissipation.
It is designed for high-efficiency power applications, with low on-resistance and fast switching capabilities.

Manufacturer

The manufacturer of the IRFH5110TRPBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in designing and producing a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and automotive solutions. Infineon serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency, automotive safety, and connectivity. The IRFH5110TRPBF is a N-channel MOSFET used primarily in power management applications, reflecting Infineon's commitment to advanced semiconductor technology.

Application

The IRFH5110TRPBF is an N-channel MOSFET used in various applications, including power management, DC-DC converters, motor control, and high-efficiency power supplies. It is suitable for applications that require fast switching, low on-resistance, and high thermal performance, making it ideal for automotive, industrial, and consumer electronics.

Equivalent

The IRFH5110TRPBF is an N-channel MOSFET. Equivalent products include the STP75NF75, FQP75N75, and AOD7N75. Always check the datasheets for specific electrical characteristics and package compatibility to ensure suitability for your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire