IRFH5025TRPBF

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IRFH5025TRPBF

MOSFET N-CH 250V 3.8A 8PQFN

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  • Mfr. Partie #IRFH5025TRPBF
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Spécifications

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2150 pF @ 50 V
Power Dissipation (Max) 3.6W (Ta), 8.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerVDFN
Base Product Number IRFH5025

Vue d'ensemble

Description

IRFH5025TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications, particularly in power management systems. This device features a low on-resistance, enabling efficient switching and reducing power loss in circuits. Rated for high voltage and current, it can handle applications like DC-DC converters, motor control, and power supply regulation.
Key characteristics include fast switching speeds, low gate charge, and high thermal stability, making it suitable for high-frequency applications. The IRFH5025TRPBF is typically housed in a TO-220 package, allowing for effective heat dissipation. When utilizing this component, proper thermal management and circuit design practices are essential to optimize performance and reliability. Overall, it serves as a versatile solution for engineers looking to enhance efficiency in their designs.

Features

The IRFH5025TRPBF is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 25V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 50A, offering robust performance for high-load applications.
3. RDS(on): It features a low on-resistance (RDS(on)) of approximately 8 mΩ at a gate voltage (Vgs) of 10V, which helps reduce power losses during operation.
4. Package Type: The MOSFET comes in a TO-220 package, providing good thermal performance and easy mounting.
5. Fast Switching: It offers fast switching times, making it suitable for various high-frequency applications.
6. Thermal Resistance: The device has a low thermal resistance, contributing to effective heat dissipation.
Overall, the IRFH5025TRPBF is ideal for power applications requiring efficiency and reliability.

Package

The IRFH5025TRPBF is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, offering efficient thermal performance and ease of handling in various applications.

Pinout

The IRFH5025TRPBF is a N-channel MOSFET with a total of 8 pins. The pin configuration and functions are as follows:
1. Gate (G): Pin for controlling the MOSFET; it requires a voltage to turn on/off the device.
2. Drain (D): Pin for the output connection; the current flows from drain to source when the MOSFET is on.
3. Source (S): Pin for the input connection; it typically connects to ground in low-side switching configurations.
4. Additional pins: There are additional pins for other functions or to improve thermal performance, but the core functionality revolves around the gate, drain, and source.
The IRFH5025TRPBF is designed for high-speed switching applications and can handle high currents and voltages, making it suitable for power management in various electronic circuits.

Manufacturer

The IRFH5025TRPBF is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its extensive range of products, including diodes, transistors, resistors, capacitors, and inductors. Vishay serves a wide array of industries, including automotive, industrial, telecommunications, and consumer electronics, providing components that are essential for the operation of various electronic devices and systems. The company is recognized for its commitment to quality and innovation in the electronics sector.

Application

The IRFH5025TRPBF is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor control, and power switches. Its low RDS(on) and high efficiency make it suitable for high-frequency applications, such as laptop power supplies, LED drivers, and battery management systems. Additionally, it is often utilized in automotive and industrial applications for its robustness and thermal performance.

Equivalent

The IRFH5025TRPBF is a N-channel MOSFET. Equivalent products include the STP30NF20, FQP30N20, and BSS138. Always check the specific electrical characteristics and package types to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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