IRFH5006TRPBF

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IRFH5006TRPBF

MOSFET N-CH 60V 21A/100A 8PQFN

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Spécifications

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 21A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.1mOhm @ 50A, 10V
Vgs(th)(Max)@Id 4V @ 150µA
GateCharge(Qg)(Max)@Vgs 100 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4175 pF @ 30 V
PowerDissipation(Max) 3.6W (Ta), 156W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-PQFN (5x6)

Vue d'ensemble

Description

IRFH5006TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance switching applications. It features low on-resistance, high-speed operation, and can handle significant voltage and current levels, making it suitable for power management, motor control, and other electronic applications. The device typically comes in a TO-220 package, which facilitates efficient heat dissipation. Key parameters include a maximum drain-source voltage (Vds) often rated around 60V, a continuous drain current (Id) that can exceed 50A, and a low threshold voltage (Vgs(th)), ensuring it operates effectively in various conditions. Its robust construction and efficiency make it an ideal choice for both commercial and industrial uses in circuits requiring reliable and swift switching capabilities.

Features

The IRFH5006TRPBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V, making it suitable for various power management applications.
2. Current Rating: It can handle continuous drain currents of up to 50A, enabling robust performance in demanding applications.
3. RDS(on): The on-resistance is low (typically around 8 mΩ at VGS = 10V), which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) is between 1V and 2.5V, allowing for easy drive from low-voltage logic levels.
5. Package Type: It comes in a compact DPAK package, which facilitates thermal management and saves board space.
6. Fast Switching Speed: Optimized for high-speed switching applications, suitable for DC-DC converters and motor control.
Overall, the IRFH5006TRPBF is an efficient, high-current MOSFET ideal for power applications in automotive, industrial, and consumer electronics.

Package

The IRFH5006TRPBF is packaged in a TO-220 form factor. This packaging provides efficient thermal performance and is commonly used for power MOSFETs, facilitating easy heat dissipation in electronic applications.

Pinout

The IRFH5006TRPBF is an N-channel MOSFET with a total of 6 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET switching; applying a voltage here turns the device on or off.
2. Drain (D) - This pin connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S) - This pin is typically connected to ground or the lower potential in a circuit; current flows into the source when the MOSFET is on.
4. Gate (G) - This is a repeat of the gate connection, as the package may include multiple ways to connect the gate for flexibility in layout.
5. Drain (D) - This is a repeat of the drain connection, providing additional flexibility in circuit design.
6. Source (S) - This is a repeat of the source connection, again for layout flexibility.
The IRFH5006TRPBF is commonly used in power management applications due to its low on-resistance and high efficiency.

Manufacturer

The IRFH5006TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company based in Germany that specializes in the development and production of a wide range of semiconductor solutions. Their products are used in various applications, including automotive, industrial, and consumer electronics, focusing on areas such as power management, automotive safety, and connectivity. Infineon aims to drive innovations in energy efficiency and is a significant player in the semiconductor industry, contributing to advancements in technology and sustainability.

Application

The IRFH5006TRPBF is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and high-efficiency power switching. Its low on-resistance and high-speed performance make it suitable for consumer electronics, automotive systems, and renewable energy systems, enabling efficient power conversion and control in various electronic devices.

Equivalent

The IRFH5006TRPBF is an N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and IPP50R190P6. Always verify specifications such as voltage, current ratings, and RDS(on) to ensure compatibility for your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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