IRFD9120PBF

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IRFD9120PBF

MOSFET P-CH 100V 1A 4DIP

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Spécifications

Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 25 V
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
Base Product Number IRFD9120

Vue d'ensemble

Description

The IRFD9120PBF is a N-channel MOSFET designed for high-efficiency power management applications. It features a low on-resistance (R_DS(on)) and high-speed switching capabilities, making it suitable for use in a variety of electronic devices, including power supplies, motor drives, and DC-DC converters. With a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of up to 60A, it can handle significant loads while minimizing power loss.
The device is packaged in a TO-220 form factor, facilitating effective heat dissipation. Its fast switching times enable improved performance in high-frequency applications, while its thermal characteristics support reliable operation under various conditions. The IRFD9120PBF is also RoHS compliant, ensuring it meets environmental standards for hazardous substances. Overall, it is a versatile component ideal for engineers seeking efficient and reliable solutions in power electronics.

Features

The IRFD9120PBF is a high-performance N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 10A.
3. R_DS(on): Low on-resistance (typically around 0.045 ohms at V_GS of 10V), ensuring minimal power loss during operation.
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) ranging from 1V to 2.5V, allowing for easy driving with low gate voltage.
5. Fast Switching Speed: Suitable for high-frequency applications due to low gate charge (Qg), which enhances efficiency.
6. Package Type: Available in DPAK (TO-252) package, providing good thermal performance and ease of handling.
7. Applications: Ideal for power management, DC-DC converters, and motor control.
These features make the IRFD9120PBF suitable for various consumer and industrial applications, emphasizing efficiency and reliability.

Package

The IRFD9120PBF is packaged in a TO-220 format. This package type is designed for enhanced thermal performance and is commonly used for power MOSFET applications.

Pinout

The IRFD9120PBF is an N-channel MOSFET housed in a TO-220 package, featuring a total of three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load. Current flows out of the drain when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the ground or the negative side of the load. It serves as the reference point for the gate voltage.
The IRFD9120PBF is designed for high-speed switching applications, with a low on-resistance, making it suitable for power management in various electronic circuits.

Manufacturer

The IRFD9120PBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in providing innovative solutions in various sectors, including automotive, industrial power control, and digital security. The company focuses on developing high-performance semiconductor products that enhance energy efficiency and reliability in electronic applications. With a strong emphasis on research and development, Infineon plays a significant role in advancing technology and supporting the transition to a more sustainable and connected world.

Application

The IRFD9120PBF is a N-channel MOSFET used primarily in power management applications. Its key areas include:
1. Switching Regulators: Efficient power conversion in DC-DC converters.
2. Motor Control: Driving and controlling motors in industrial and automotive applications.
3. Power Amplifiers: Used in RF applications for amplifying signals.
4. Load Switching: Managing power delivery to various electronic loads.
5. Battery Management Systems: Enhancing efficiency in charging and discharging cycles.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.

Equivalent

The IRFD9120PBF is an N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and IRF3205. Always verify specifications such as voltage, current ratings, and RDS(on) to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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