IRFD110

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IRFD110

MOSFET N-CH 100V 1A 4DIP

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Spécifications

Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 540mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
Base Product Number IRFD110

Vue d'ensemble

Description

IRFD110, or Introduction to International Relations and Foreign Development, explores the foundational concepts of international relations, focusing on global politics, diplomacy, and foreign policy. The course examines key theories, such as realism, liberalism, and constructivism, while analyzing the roles of state and non-state actors in the international system. Students engage with topics like international organizations, global security issues, human rights, and economic development.
The course aims to provide a comprehensive understanding of how countries interact, the impact of globalization, and the challenges of international cooperation. Through case studies and current events, students learn to critically assess international issues and develop analytical skills essential for careers in diplomacy, international business, and non-governmental organizations. Overall, IRFD110 serves as a foundational stepping stone for those interested in pursuing advanced studies or careers in international relations and development.

Features

The IRFD110 is a power MOSFET designed for low voltage applications. Key features include:
1. Low On-Resistance: It offers a low R_DS(on), which minimizes power loss and improves efficiency.
2. Drain-Source Voltage: Rated for a maximum V_DS of 30V, suitable for various low-voltage applications.
3. Current Rating: Capable of handling continuous currents up to 110A, making it ideal for high-power applications.
4. Fast Switching Speed: Designed for rapid switching, which is beneficial for applications like power supplies and motor control.
5. Thermal Performance: Features a robust package that allows for effective heat dissipation, enhancing reliability.
6. Gate Threshold Voltage: Operates efficiently with a low gate threshold voltage, allowing for easy interfacing with low-voltage control circuits.
Overall, the IRFD110 is well-suited for applications such as power management, automotive, and industrial control systems.

Package

The IRFD110 is typically found in a TO-220 package type. This packaging provides good thermal performance and is suitable for various power applications.

Pinout

The IRFD110 is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is where the current enters the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is where the current exits the MOSFET and typically connects to ground in low-side switching applications.
The IRFD110 is designed for applications requiring high-speed switching and has a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of 30A. It is commonly used in power electronics, switching power supplies, and motor control applications.

Manufacturer

The IRFD110 is manufactured by International Rectifier, a company that specializes in power management and semiconductor technologies. Founded in 1947, International Rectifier is known for its innovation in power semiconductor devices, including MOSFETs, IGBTs, and integrated circuits. The company focuses on providing solutions for various applications, including automotive, industrial, and consumer electronics. In 2014, International Rectifier was acquired by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon continues to produce and support the IRFD110 and similar products, catering to a wide range of industries with a commitment to energy efficiency and performance.

Application

The IRFD110 is a dual N-channel MOSFET commonly used in various applications, including power management, motor control, switching power supplies, and audio amplifiers. Its features make it suitable for low-voltage, high-speed switching applications, as well as in automotive and industrial systems for driving loads efficiently.

Equivalent

Equivalent products to the IRFD110 chip include the IRF510, IRF540, and IRF520. These MOSFETs share similar specifications, such as voltage ratings and current handling capabilities, making them suitable alternatives in various applications. Always check specific datasheets for precise parameters to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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