IRFBG30PBF

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IRFBG30PBF

MOSFET N-CH 1000V 3.1A TO220AB

  • Fabricant
  • Mfr. Partie #IRFBG30PBF
  • Paquet TO-220-3
  • Fiche de données
  • En stock6664

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Spécifications

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1000 V
Current-ContinuousDrain(Id)@25°C 3.1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 5Ohm @ 1.9A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 80 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 980 pF @ 25 V
PowerDissipation(Max) 125W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFBG30PBF is a high-performance N-channel MOSFET manufactured by International Rectifier, designed for various applications in power management systems. It features a voltage rating of 30V and a continuous drain current capability of up to 75A. The device is optimized for low on-resistance (RDS(on)), leading to reduced conduction losses and improved efficiency in power circuits. It comes in a TO-220 package, which facilitates efficient heat dissipation during operation.
Key specifications include a maximum gate-to-source voltage of ±20V, a threshold voltage (VGS(th)) range of 2 to 4V, and fast switching capabilities, making it suitable for applications like DC-DC converters, motor drives, and other high-frequency switching applications. The IRFBG30PBF is also compliant with RoHS standards, ensuring it is environmentally friendly.
Overall, the IRFBG30PBF is widely used in both consumer and industrial electronics due to its robust performance and reliability in demanding environments.

Features

The IRFBG30PBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 110A, allowing for significant power handling capability.
3. R_DS(on): The on-resistance is low at around 9.5 mΩ (max), enhancing efficiency and reducing heat generation during operation.
4. Gate Threshold Voltage: It operates with a gate threshold voltage (V_GS(th)) between 1.0V to 2.0V, ensuring compatibility with low drive voltages.
5. Fast Switching: The device features fast switching capabilities ideal for applications in DC-DC converters, motor drivers, and power management circuits.
6. Package: It is available in a TO-220 package, providing good thermal performance and easy mounting.
Overall, the IRFBG30PBF is suitable for various applications that require efficient and reliable power switching.

Package

The IRFBG30PBF is packaged in a TO-220 form factor, which is a metal can package offering good thermal performance and ease of mounting.

Pinout

The IRFBG30PBF is an N-channel MOSFET with a total of four pins. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET operation; a voltage applied here turns the device on or off.
2. Drain (D): The terminal where the current flows out when the MOSFET is in the "on" state.
3. Source (S): The terminal through which current enters the MOSFET; connected to the ground in typical applications.
4. Body (B): Internally connected to the source; typically not an external pin but important for operation.
This MOSFET is known for its high efficiency and is used in various applications such as power management, switching power supplies, and motor control. Its robust design allows for high current and voltage handling capabilities, making it suitable for demanding applications.

Manufacturer

The manufacturer of the IRFBG30PBF is Infineon Technologies AG, a global leader in semiconductor solutions. Infineon is based in Germany and specializes in the design and manufacture of semiconductors for various applications, including automotive, industrial, and consumer electronics. The company focuses on areas such as power management, automotive systems, and security, providing innovative technologies that enhance energy efficiency and performance. Infineon is known for its commitment to sustainability and advancing digitalization through smart technologies.

Application

The IRFBG30PBF is an N-channel MOSFET primarily used in power management applications. Its application areas include:
1. Switching Power Supplies: Efficiently converting and regulating voltage.
2. Motor Control: Driving DC motors in industrial and automotive applications.
3. Lighting Systems: Used in LED drivers and dimmers.
4. Inverters: For renewable energy systems, like solar inverters.
5. Telecommunications: Power amplification in RF applications.
Its high voltage and current ratings make it suitable for demanding power tasks.

Equivalent

The IRFBG30PBF is a N-channel MOSFET with a 30V rating. Equivalent products include the BSS138, IRLZ44N, and FQP30N30. It's essential to verify specific characteristics like RDS(on), VGS, and current ratings before substituting. Always consult datasheets for detailed specifications.

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TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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