IRFBG30

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IRFBG30

MOSFET N-CH 1000V 3.1A TO220AB

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  • Mfr. Partie #IRFBG30
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  • En stock20267

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Spécifications

Supplier Vishay Siliconix
Package Tube
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1000 V
Current-ContinuousDrain(Id)@25°C 3.1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 5Ohm @ 1.9A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 80 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 980 pF @ 25 V
PowerDissipation(Max) 125W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

IRFBG30 is a high-performance N-channel MOSFET designed for various applications, including power management and switching circuits. It features a maximum continuous drain current rating of 30A and a low on-resistance (RDS(on)), which enhances efficiency by minimizing power losses during operation. The device typically operates at a voltage rating of up to 75V, making it suitable for a wide range of designs in power electronics.
The IRFBG30 is characterized by its fast switching capabilities, making it ideal for high-speed applications such as DC-DC converters and motor drivers. Its robust construction ensures reliability under demanding conditions. Additionally, it includes a thermal management capability that allows for efficient heat dissipation, further enhancing its operational lifespan.
Overall, the IRFBG30 combines high efficiency, reliability, and versatility, making it a popular choice among engineers for various electronic applications.

Features

The IRFBG30 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) can reach up to 100A, making it suitable for high-current applications.
3. R_DS(on): Low on-resistance (R_DS(on)) ensures minimal conduction losses, enhancing efficiency.
4. Gate Threshold Voltage: Operates with a low gate-to-source threshold voltage (V_GS(th)), allowing easy drive with standard logic levels.
5. Package Type: Available in a TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Fast Switching Speed: Suitable for high-frequency applications due to its fast switching capabilities.
7. Thermal Resistance: Low thermal resistance helps maintain performance under high power conditions.
These features make the IRFBG30 ideal for use in power supplies, motor drives, and various switching applications.

Package

The IRFBG30 is typically packaged in a TO-220 form factor, which is a commonly used package for power MOSFETs. This package type features a metal tab for heat dissipation and is designed for efficient thermal management in high-power applications.

Pinout

The IRFBG30 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically found in power electronics applications. It has a total of 5 pins.
### Pin Count and Functions:
1. Gate (G) - Controls the MOSFET's operation (turns it on/off).
2. Drain (D) - The terminal through which the output current flows when the device is on.
3. Source (S) - The terminal that provides the return path for the current; connected to the ground in most applications.
4. Body Diode (internal) - Not a pin, but an intrinsic feature allowing current to flow from Drain to Source when the MOSFET is off.
5. Thermal Pad (TP) - Often present for better heat dissipation, not always counted as a pin.
The IRFBG30 is typically used in high-efficiency applications such as switching power supplies and motor drives due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The IRFBG30 is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon is based in Germany and specializes in designing and producing a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and automotive components. The company focuses on applications in automotive, industrial, and consumer electronics markets. Infineon is known for its innovations in power management and efficiency, making it a key player in the development of technologies for energy efficiency and renewable energy solutions.

Application

The IRFBG30 is an N-channel MOSFET primarily used in power electronics applications including:
1. Switching Power Supplies: For efficient conversion and regulation of voltage.
2. Motor Control: Used in drivers for DC and brushless motors.
3. Power Inverters: In renewable energy systems for converting DC to AC.
4. LED Drivers: For controlling LED lighting systems.
5. Audio Amplifiers: In high-fidelity audio systems for improved performance.
Its high voltage and current ratings make it suitable for these applications.

Equivalent

The IRFBG30 is an N-channel MOSFET commonly used in power applications. Equivalent products include the STP30NF10, FQP30N10, and RFP30N06. Other alternatives can include the BUK7M30-100 and APT30M60. Be sure to check specifications like Vds, Id, Rds(on), and package type for compatibility.

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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