IRFBE30PBF

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IRFBE30PBF

MOSFET N-CH 800V 4.1A TO220AB

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Spécifications

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 4.1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3Ohm @ 2.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 78 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1300 pF @ 25 V
PowerDissipation(Max) 125W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

IRFBE30PBF is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-speed switching and efficient power management applications. With a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 30A, this MOSFET is suitable for various applications including power supplies, motor drivers, and automotive systems.
The IRFBE30PBF features a low on-resistance (R_DS(on)), which reduces power losses and enhances thermal performance. It is packaged in a TO-220 format, allowing for easy heat dissipation. Its gate threshold voltage (V_GS(th)) is relatively low, enabling it to be driven by standard logic-level signals.
Additionally, the “PBF” in its designation indicates that the component is lead-free, aligning with environmental standards. Overall, the IRFBE30PBF is a versatile component ideal for designers seeking reliable and efficient switching solutions in electronic circuits.

Features

The IRFBE30PBF is an N-channel MOSFET designed for high-performance applications. Key features include:
- Voltage Rating: It has a drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
- Current Rating: Can handle continuous drain currents up to 30A, allowing it to manage significant power loads.
- R_DS(on): Low on-resistance (R_DS(on)) typically around 0.045 ohms, which minimizes power loss and improves efficiency during operation.
- Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) between 2V to 4V, ensuring it can be driven effectively by standard logic levels.
- Package Type: Available in TO-220, making it easy to integrate into various circuit designs and providing good thermal performance.
- Fast Switching: Designed for efficient switching, suitable for applications in power management, motor control, and DC-DC converters.
Overall, the IRFBE30PBF is ideal for applications requiring robustness, efficiency, and reliable performance in power electronics.

Package

The IRFBE30PBF is packaged in a TO-220 style package. This type of package features a metal tab for heat dissipation, making it suitable for high-power applications.

Pinout

The IRFBE30PBF is a N-channel MOSFET with a total of 3 pins.
Pin Functions:
1. Gate (G): This pin controls the MOSFET's switching. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the load current enters the MOSFET. It connects to the positive voltage when the MOSFET is in the "on" state.
3. Source (S): This pin is where the current exits the MOSFET. It typically connects to ground in a low-side switch configuration.
The device is commonly used in power management applications, switching, and amplifier circuits. Its specifications include a maximum voltage rating of 30V and a continuous drain current rating of 60A, making it suitable for various electronic applications.

Manufacturer

The IRFBE30PBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, primarily for automotive, industrial, and consumer electronics applications. The company is known for its innovations in power management, providing energy-efficient solutions to various sectors. Infineon operates globally, catering to diverse markets with a strong emphasis on sustainability and advanced technology.

Application

The IRFBE30PBF is a N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, power supply circuits, motor drivers, and load switching in consumer electronics. It is also suitable for use in automotive systems and renewable energy systems like solar inverters due to its efficiency and thermal performance.

Equivalent

The IRFBE30PBF is a P-channel MOSFET. Equivalent products include the FQP30P06, STP30P3, and SI7851DP. Check specific datasheets for precise parameters like voltage, current ratings, and RDS(on) to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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