IRFBC40PBF

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IRFBC40PBF

MOSFET N-CH 600V 6.2A TO220AB

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Spécifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number IRFBC40

Vue d'ensemble

Description

The IRFBC40PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 40A, making it suitable for various power management tasks in consumer electronics, automotive systems, and industrial applications.
This MOSFET offers low on-resistance (R_DS(on)), which minimizes power loss during operation, leading to improved thermal performance and energy efficiency. Typically, it comes in a TO-220 package, facilitating easy heat dissipation. The IRFBC40PBF is also RoHS-compliant, ensuring it meets environmental regulations.
Key specifications include a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, enabling it to be driven by standard logic levels. Its fast switching speeds make it ideal for applications like switch-mode power supplies, motor drivers, and DC-DC converters. Overall, the IRFBC40PBF is a versatile component for designers looking to optimize performance and efficiency in their electronic circuits.

Features

The IRFBC40PBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various low to medium voltage applications.

2. Current Rating: The device can handle continuous drain current (I_D) up to 60A, allowing it to manage significant power loads.
3. R_DS(on): It has a low on-resistance (R_DS(on)) of around 0.025 ohms, which helps minimize power loss and improve efficiency during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating easy drive with standard logic levels.
5. Package Type: It is available in a TO-220 package, offering effective thermal dissipation and ease of mounting.
6. Applications: Ideal for power management, motor control, and other applications requiring efficient switching.
This combination of features makes the IRFBC40PBF a versatile component for power electronic designs.

Package

The IRFBC40PBF is typically packaged in a TO-220 form factor, which is a standard package for power MOSFETs, allowing for efficient heat dissipation and easy mounting on heat sinks.

Pinout

The IRFBC40PBF is an N-channel MOSFET with a total of 3 pins. Its pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET and is used to turn it on and off by applying a voltage.
2. Drain (D): This pin is where the load is connected and through which the current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The IRFBC40PBF is designed for high-speed switching applications and is often used in power management, DC-DC converters, and various electronic circuits. It has a maximum drain-source voltage of 40V and a continuous drain current rating of up to 55A, making it suitable for handling significant power levels.

Manufacturer

The IRFBC40PBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in power management and automotive solutions, as well as industrial and security applications. The company focuses on a wide range of technologies, including microcontrollers, sensors, and power semiconductors, and serves various sectors such as automotive, industrial, and consumer electronics. Infineon is known for its commitment to innovation and sustainability in the semiconductor industry.

Application

The IRFBC40PBF is a N-channel MOSFET primarily used in applications such as power management, switching power supplies, motor control, and automotive systems. Its high efficiency and low on-resistance make it suitable for DC-DC converters, inverters, and other power electronics where high-speed switching and thermal performance are essential.

Equivalent

The IRFBC40PBF is an N-channel MOSFET. Equivalent products include the STP16NF06, STP20NF06, and BUK456-100B. Always verify specifications such as voltage, current ratings, and package types to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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