IRFB7730PBF

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IRFB7730PBF

MOSFET N-CH 75V 195A TO220AB

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V
Current-ContinuousDrain(Id)@25°C 195A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 2.6mOhm @ 100A, 10V
Vgs(th)(Max)@Id 3.7V @ 250µA
GateCharge(Qg)(Max)@Vgs 407 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 13660 pF @ 25 V
PowerDissipation(Max) 375W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFB7730PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It has a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of 77A at a case temperature of 25°C. This device features low on-resistance (R_DS(on)), typically around 5.5 mΩ, which reduces power loss and enhances overall performance in power conversion and switching applications.
The IRFB7730PBF is commonly used in DC-DC converters, motor drivers, and power management systems due to its fast switching capabilities and thermal performance. It is packaged in a TO-220 format, facilitating effective heat dissipation. The "PBF" suffix indicates that the component is lead-free, adhering to RoHS compliance standards for environmental safety. Overall, the IRFB7730PBF is suitable for applications requiring high current handling and efficiency.

Features

The IRFB7730PBF is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: 30V, allowing for reliable operation in low-voltage circuits.
2. Current Rating: Continuous drain current of up to 70A, suitable for high-power applications.
3. Low RDS(on): With a drain-source on-resistance of about 0.014Ω at 10V, it minimizes conduction losses.
4. Fast Switching: Designed for rapid switching, making it ideal for power supply and motor control applications.
5. Thermal Performance: High thermal stability with a maximum junction temperature of 175°C.
6. Package: Available in a TO-220 and D2PAK package, providing good thermal management and ease of assembly.
7. Gate Threshold Voltage: Low gate threshold voltage, enabling easy drive with logic-level signals.
These characteristics make the IRFB7730PBF a popular choice for applications in power management, automotive, and industrial electronics.

Package

The IRFB7730PBF is typically packaged in a TO-220 form factor. This package type is designed for power MOSFETs, providing efficient heat dissipation and ease of mounting to heatsinks in various applications.

Pinout

The IRFB7730PBF is a N-channel MOSFET with a pin count of 4. The function of each pin is as follows:
1. Gate (G): This pin controls the MOSFET's switching behavior. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which current flows out of the MOSFET when it is in the on-state.
3. Source (S): This terminal is where current enters the MOSFET when it is conducting.
4. Tab/Case (Tab): Often connected to the source, it serves as a heat sink for thermal management.
The IRFB7730PBF is designed for applications requiring high efficiency and fast switching, making it suitable for power management in various electronic devices.

Manufacturer

The manufacturer of the IRFB7730PBF is Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in the development and production of a wide range of semiconductor and system solutions. The company operates in various sectors, including automotive, industrial power control, and digital security. Infineon is known for its focus on power management and efficiency, particularly in applications such as electric vehicles, renewable energy, and smart grids. Their products include a variety of components such as power MOSFETs, integrated circuits, and sensors, catering to both consumer and industrial markets.

Application

The IRFB7730PBF is a N-channel MOSFET primarily used in power applications such as DC-DC converters, motor drives, and power management systems. Its high efficiency and low on-resistance make it suitable for renewable energy systems, industrial power supplies, and automotive applications like electric vehicles. Additionally, it is used in inverter circuits and battery management systems.

Equivalent

The IRFB7730PBF is a N-channel MOSFET. Equivalent products include:
1. STP75NF75
2. AOD6N60
3. FQP75N06
4. BUK9YB30-40E
5. IXFH48N10
Always verify specifications like voltage, current ratings, and RDS(on) to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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