IRFB7434PBF

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IRFB7434PBF

MOSFET N-CH 40V 195A TO220AB

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Spécifications

Package Tube
Series HEXFET®, StrongIRFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 195A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 1.6mOhm @ 100A, 10V
Vgs(th)(Max)@Id 3.9V @ 250µA
GateCharge(Qg)(Max)@Vgs 324 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 10820 pF @ 25 V
PowerDissipation(Max) 294W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFB7434PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency switching applications in power management, including DC-DC converters and motor control. This MOSFET features a low on-resistance (RDS(on)), which minimizes power losses during operation and enhances thermal performance.
Key specifications include a maximum drain-source voltage (VDS) of 40V, a continuous drain current (ID) up to 120A, and a low gate threshold voltage, allowing for efficient switching at lower voltages. The package typically comes in a TO-220 or D2PAK format, facilitating easy integration into various circuits.
The IRFB7434PBF is also RoHS compliant, indicating it meets environmental regulations regarding hazardous substances. Overall, it is suitable for applications demanding high efficiency, compact design, and reliability in power electronics.

Features

The IRFB7434PBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (Vds) of 75V.
2. Continuous Drain Current: Capable of handling up to 120A, making it suitable for high-current applications.
3. Low RDS(on): Offers a low on-resistance of approximately 4.2 mΩ at a gate-source voltage (Vgs) of 10V, which enhances efficiency and reduces heat generation.
4. Fast Switching: Designed for rapid switching speeds, ideal for applications in power supplies and motor drives.
5. Thermal Performance: It has a maximum junction temperature of 175°C, which allows for robust operation under elevated temperatures.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
These characteristics make the IRFB7434PBF suitable for applications like DC-DC converters, UPS systems, and electric vehicle power management.

Package

The IRFB7434PBF is packaged in a TO-220 type package. This package is designed for efficient thermal management and allows for easy mounting on heatsinks, making it suitable for high-power applications.

Pinout

The IRFB7434PBF is an N-channel MOSFET with a pin count of 5. Its pin configuration includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output where the load is connected.
3. Source (S) - The input side, typically connected to ground in low-side switching applications.
4. Tab/Case (T) - Often used for heat dissipation and is electrically connected to the Source.
Key features of the IRFB7434PBF include a low on-resistance, high switching speed, and its ability to handle high current and voltage, making it suitable for power applications such as motor drives and power converters. It is often found in automotive and industrial circuitry due to its robustness.

Manufacturer

The IRFB7434PBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in the development and production of a wide range of semiconductor solutions, including power management, automotive electronics, industrial power control, and security technologies. Infineon serves various markets such as automotive, industrial, and consumer electronics, focusing on innovations that promote energy efficiency and connectivity. The company is known for its high-performance MOSFETs, like the IRFB7434PBF, which are used in applications requiring efficient power switching.

Application

The IRFB7434PBF is an N-channel MOSFET primarily used in power electronics applications, including DC-DC converters, motor drives, and switch-mode power supplies (SMPS). Its high current and voltage ratings make it suitable for automotive applications, renewable energy systems, and industrial power management. Additionally, it can be utilized in battery management systems and power inverters for efficient energy conversion.

Equivalent

The IRFB7434PBF is a N-channel MOSFET. Equivalent products include:
1. STP75NF75
2. FQP75N75
3. AOD5N60
4. MBRF7434PBF
Always verify specifications like voltage, current, and RDS(on) to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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