IRFB4620PBF

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IRFB4620PBF

IRFB4620 - 12V-300V N-CHANNEL PO

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  • Mfr. Partie #IRFB4620PBF
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Spécifications

Supplier Rochester Electronics, LLC
Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 25A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 72.5mOhm @ 15A, 10V
Vgs(th)(Max)@Id 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 38 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1710 pF @ 50 V
PowerDissipation(Max) 144W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFB4620PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a low on-resistance (R_DS(on)) and high voltage rating, making it suitable for use in power supplies, motor drives, and other high-performance switching applications.
Key specifications of the IRFB4620PBF include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of 110A, and an R_DS(on) of approximately 4.6 mΩ at a gate-source voltage (V_GS) of 10V. The device is housed in a TO-220 package, allowing for effective heat dissipation.
The "PBF" designation indicates that the MOSFET is Pb-free, complying with environmental regulations such as RoHS. Its fast switching capabilities and robustness make it a popular choice for power management in automotive, industrial, and consumer electronics. Overall, the IRFB4620PBF provides a reliable solution for applications requiring efficient power control.

Features

The IRFB4620PBF is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Continuous Drain Current: Capable of handling up to 100A of continuous current (I_D) at a specified temperature.
3. On-Resistance: Low on-resistance (R_DS(on)) of approximately 5.5 mΩ, allowing for reduced conduction losses and improved efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2 to 4V, facilitating easy drive with standard logic levels.
5. Package Type: Available in a TO-220 package, which aids in effective heat dissipation.
6. Fast Switching: Designed for fast switching applications, making it suitable for switching power supplies, motor control, and other high-frequency applications.
7. RoHS Compliant: The "PBF" in its designation indicates that it is lead-free and complies with the Restriction of Hazardous Substances directive.
These features make the IRFB4620PBF ideal for various power management applications in the automotive and industrial sectors.

Package

The IRFB4620PBF is packaged in a TO-220 type package, which is a commonly used package for power MOSFETs, providing good thermal performance and ease of mounting.

Pinout

The IRFB4620PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This is the pin through which the load current flows when the MOSFET is turned on. It connects to the positive supply voltage or load.
3. Source (S): This pin is connected to the ground or negative side of the load. It serves as the return path for the current when the MOSFET is conducting.
The IRFB4620PBF is designed for high-efficiency switching applications and features low on-resistance and fast switching speeds.

Manufacturer

The IRFB4620PBF is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in providing semiconductor and system solutions for a variety of applications, including automotive, industrial power control, and security. The company is known for its innovations in power management and semiconductor technology, particularly in the field of power MOSFETs, which are crucial for efficient energy management in electronic devices. Infineon serves a diverse range of industries, focusing on sustainability and advancing technologies for a connected world.

Application

The IRFB4620PBF is a N-channel MOSFET primarily used in high-efficiency power conversion applications. Its main application areas include:
1. DC-DC converters: For efficient voltage regulation in power supplies.
2. Motor drives: In electric vehicles and industrial automation.
3. Switching power supplies: To enhance performance and reduce losses.
4. Inverters: For renewable energy systems like solar energy conversion.
5. UPS systems: Ensuring reliable power backup solutions.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.

Equivalent

Equivalent products to the IRFB4620PBF MOSFET include the NXP PSMN2R8-80BS, STMicroelectronics STP80NF55, and the Vishay SiHF30N60. Always verify specifications like V_DS, I_D, R_DS(on), and package compatibility for suitability in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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