IRFB4510PBF

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IRFB4510PBF

IRFB4510 - 12V-300V N-CHANNEL PO

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Spécifications

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 62A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 13.5mOhm @ 37A, 10V
Vgs(th)(Max)@Id 4V @ 100µA
GateCharge(Qg)(Max)@Vgs 87 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3180 pF @ 50 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFB4510PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. With a voltage rating of 100V and a current rating of 75A, it is optimized for use in power supplies, motor drives, and other high-performance applications. This MOSFET features a low on-resistance (RDS(on)) value, which minimizes conduction losses and enhances thermal performance.
Its fast switching capabilities make it suitable for applications that require high-frequency operations, while the rugged construction ensures reliability in demanding conditions. The device is housed in a TO-220 package, facilitating easy heat dissipation and efficient thermal management.
The IRFB4510PBF is also RoHS compliant, aligning with environmental regulations. Overall, it is ideal for designers seeking efficient, high-power solutions in various electronic applications.

Features

The IRFB4510PBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 100V maximum drain-to-source voltage.
2. Current Rating: Capable of handling continuous drain currents up to 100A.
3. RDS(on): Low on-resistance (approximately 4.5 mΩ), which enhances efficiency and reduces power loss.
4. Gate Threshold Voltage: Typically between 2V and 4V, allowing for easy drive with low-voltage logic levels.
5. Package Type: Available in an TO-220 package that supports efficient heat dissipation.
6. Fast Switching Speed: Suitable for applications requiring quick turn-on and turn-off transitions.
7. Applications: Commonly used in power supplies, motor drives, and other switching applications.
These features make the IRFB4510PBF ideal for high-efficiency power management and switching applications.

Package

The IRFB4510PBF is packaged in a TO-220 form factor. This package type is designed for high-power applications, offering good thermal performance and ease of heat dissipation.

Pinout

The IRFB4510PBF is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is where the current exits the MOSFET. It connects to the load.
3. Source (S) - This pin is where the current enters the MOSFET. It is typically connected to ground or a lower potential in common applications.
4. Body Diode (integrated) - While not a pin, the IRFB4510PBF also features an internal body diode that allows current to flow from the source to the drain when the MOSFET is off, useful in applications like inductive loads.
The device is designed for high-speed switching and is commonly used in power management applications, such as DC-DC converters and motor control.

Manufacturer

The IRFB4510PBF is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Infineon specializes in various sectors, including automotive, industrial power control, and security technologies. The company is renowned for its innovative products in power management, microcontrollers, and sensors, contributing significantly to the development of efficient energy solutions and advanced electronic applications. Infineon operates in numerous markets, providing essential components for applications ranging from electric vehicles to renewable energy systems, making it a key player in the semiconductor industry.

Application

The IRFB4510PBF is an N-channel MOSFET widely used in applications such as DC-DC converters, motor drives, power inverters, and high-efficiency power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for automotive, renewable energy systems, and industrial power management.

Equivalent

The IRFB4510PBF is a N-channel MOSFET. Equivalent products include:
1. AOD6N60 - 600V, 6A
2. STP75NF75 - 75V, 75A
3. FQP30N60 - 600V, 30A
4. IRF320 - 55V, 80A
Ensure to check specifications like Vds, Id, Rds(on), and package type for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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