IRFB4321PBF

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IRFB4321PBF

IRFB4321 - 12V-300V N-CHANNEL PO

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Spécifications

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 85A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 15mOhm @ 33A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 4460 pF @ 50 V
PowerDissipation(Max) 350W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFB4321PBF is a high-performance N-channel MOSFET designed for various applications, including power management, motor control, and DC-DC converters. It features a low on-resistance (RDS(on)), which enhances its efficiency by minimizing power loss during operation. With a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of up to 100A, it is suitable for high-voltage applications.
The device is optimized for fast switching speeds, making it ideal for high-frequency applications. Its TO-220 package allows for efficient heat dissipation, which is crucial for maintaining performance under load. The IRFB4321PBF also meets RoHS compliance standards, ensuring it is environmentally friendly.
Overall, this MOSFET is a reliable choice for engineers looking for efficiency and performance in power electronic circuits.

Features

The IRFB4321PBF is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
- Voltage Rating: 100V, suitable for various high-voltage applications.
- Continuous Drain Current: 50A at 25°C, allowing it to handle significant power loads.
- RDS(on): Low on-resistance of approximately 0.048 ohms, enhancing efficiency and reducing heat generation.
- Gate Threshold Voltage: VGS(th) between 2V to 4V, enabling operation with low gate drive voltages.
- Package Type: Available in TO-220 and D2PAK packages, facilitating easy thermal management and mounting options.
- Fast Switching Speed: Ideal for applications requiring rapid switching, such as inverters and DC-DC converters.
- Robustness: Features low gate charge and high-speed operation, making it suitable for high-frequency designs.
Overall, the IRFB4321PBF is a versatile MOSFET well-suited for power management, motor control, and other demanding applications.

Package

The IRFB4321PBF is packaged in a TO-220 type housing.

Pinout

The IRFB4321PBF is a N-channel MOSFET with a pin count of 4. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here turns the device on or off.
2. Drain (D): This pin is the output where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or negative side of the power supply. Current flows from the source to the drain when the MOSFET is on.
4. Tab: The metal tab is typically connected to the drain and is used for heat dissipation.
The IRFB4321PBF is designed for high-efficiency switching applications and features a low on-resistance, making it suitable for power management in various electronic circuits.

Manufacturer

The IRFB4321PBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power devices, sensors, and microcontrollers. The company focuses on various applications such as automotive, industrial electronics, and power management. Infineon is known for its innovations in energy efficiency and performance, particularly in power semiconductor technologies like MOSFETs, IGBTs, and integrated circuits. Established in 1999 and headquartered in Munich, Germany, Infineon operates globally, contributing significantly to the advancement of electronic systems and technologies.

Application

The IRFB4321PBF is a N-channel MOSFET primarily used in high-efficiency power management applications. Its key application areas include DC-DC converters, motor drives, power inverters, and switch-mode power supplies (SMPS). Additionally, it is suitable for industrial automation, renewable energy systems (like solar inverters), and electric vehicles due to its high switching speed and low on-resistance characteristics.

Equivalent

The IRFB4321PBF is an N-channel MOSFET. Equivalent products include the FDBL20N60, STP20NM60, and AUIRF3205. Ensure to check specifications such as voltage, current ratings, and RDS(on) for compatibility in your application. Always validate with datasheets for exact parameters.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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