IRFB4310ZPBF

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IRFB4310ZPBF

IRFB4310 - 12V-300V N-CHANNEL PO

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Spécifications

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 6mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 150µA
GateCharge(Qg)(Max)@Vgs 170 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 6860 pF @ 50 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFB4310ZPBF is a high-performance N-channel MOSFET designed for various applications, including power management and switching. With a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) rating of up to 150A, it is well-suited for high-efficiency power devices. The IRFB4310ZPBF features a low on-state resistance (RDS(on)), which minimizes power losses during operation, enhancing overall efficiency.
This MOSFET is ideal for applications in solar inverters, motor drives, and other power conversion systems. Its fast switching capabilities allow for better performance in high-frequency applications. The device also comes in a TO-220 package, facilitating easy implementation and heat dissipation.
The IRFB4310ZPBF is RoHS-compliant, making it environmentally friendly and suitable for modern electronic designs. Overall, it is a reliable choice for engineers seeking performance and efficiency in power electronic circuits.

Features

The IRFB4310ZPBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 100V.
2. Continuous Drain Current: The device supports a continuous drain current of up to 110A, making it suitable for high-current applications.
3. Low RDS(on): It has a low on-resistance (RDS(on)) of around 5.5 mΩ, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, enabling easy drive with low gate voltages.
5. Fast Switching: The MOSFET offers fast switching speeds, making it ideal for applications like DC-DC converters and motor drivers.
6. Package Type: It typically comes in a TO-220 package, facilitating effective heat dissipation.
7. RoHS Compliance: The part is lead-free and compliant with RoHS directives, ensuring environmental safety.
These features make the IRFB4310ZPBF suitable for applications in power management, automotive, and industrial systems.

Package

The IRFB4310ZPBF is packaged in a TO-220 format. This package type features three leads and is designed for efficient heat dissipation, making it suitable for high-power applications in power electronics.

Pinout

The IRFB4310ZPBF is an N-channel MOSFET with a pin count of 3. Its pin configuration includes:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to this pin turns the MOSFET on or off.
2. Drain (D) - This pin is the output terminal where the current flows out when the MOSFET is on.
3. Source (S) - This pin is the input terminal where the current enters when the MOSFET is on.
The IRFB4310ZPBF is designed for high-efficiency applications and is commonly used in power management and conversion circuits due to its low on-resistance and fast switching capabilities.

Manufacturer

The IRFB4310ZPBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in developing a wide range of semiconductor solutions for various industries, including automotive, industrial power control, and consumer electronics. The company is known for its focus on innovation and energy-efficient technologies, providing products such as power semiconductors, microcontrollers, and sensors. Infineon aims to enhance the performance and efficiency of electronic systems, contributing to advancements in areas like electric mobility, renewable energy, and the Internet of Things (IoT).

Application

The IRFB4310ZPBF is a N-channel MOSFET commonly used in applications such as power supplies, motor drives, and inverters. It is suitable for high-efficiency switch-mode power supplies (SMPS), renewable energy systems like solar inverters, and electric vehicle power management. Its low on-resistance and high-speed switching capabilities make it ideal for automotive, industrial, and consumer electronics applications requiring efficient power handling.

Equivalent

Equivalent products to the IRFB4310ZPBF MOSFET include the STP75NF75, FQP75N75, and AUIRF4310. Always check the specific parameters such as voltage, current rating, Rds(on), and package type to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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