IRFB4310PBF

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IRFB4310PBF

IRFB4310 - 12V-300V N-CHANNEL PO

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Spécifications

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 130A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 7mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 250 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 7670 pF @ 50 V
PowerDissipation(Max) 300W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

IRFB4310PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features a low on-resistance and fast switching speeds, making it ideal for applications such as DC-DC converters, motor controllers, and power supplies. This device is housed in a TO-220 package, allowing for effective heat dissipation, which is crucial for maintaining performance and reliability in power applications.
The IRFB4310PBF has a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 90A at a specified temperature. Its built-in gate charge characteristics enable efficient driving, reducing losses in high-frequency applications. The "PBF" suffix indicates that it is lead-free and compliant with RoHS standards, making it an environmentally friendly choice for modern electronic designs.
Overall, the IRFB4310PBF is favored in power electronics for its robustness, efficiency, and versatile application potential.

Features

The IRFB4310PBF is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device supports a continuous drain current (I_D) of up to 120A, enabling it to handle substantial loads.
3. Low On-Resistance: With a typical R_DS(on) of 0.009 ohms at V_GS = 10V, it minimizes power losses during operation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing it to be driven effectively by standard logic levels.
5. Fast Switching: It features fast switching capabilities, which enhance efficiency in applications like DC-DC converters and motor control.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
These attributes make the IRFB4310PBF suitable for power management, inverter circuits, and various industrial applications.

Package

The IRFB4310PBF is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing good thermal performance and easy mounting for heat dissipation in various applications.

Pinout

The IRFB4310PBF is a N-channel MOSFET with a pin count of 3. The pins are designated as follows:
1. Gate (G): This pin is used to control the MOSFET, turning it on or off by applying a voltage relative to the source.
2. Drain (D): The drain pin is where the output current flows out of the MOSFET; it connects to the load.
3. Source (S): This pin is the terminal through which the current enters the MOSFET from the load.
The IRFB4310PBF is designed for high-efficiency applications and features low on-resistance and fast switching speeds, making it suitable for power management and switching applications in various electronic circuits.

Manufacturer

The IRFB4310PBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in a wide range of semiconductor products, including power semiconductors, microcontrollers, and sensors. The company serves various markets such as automotive, industrial, and consumer electronics, focusing on energy efficiency and connectivity solutions. Infineon is recognized for its innovation in power management technologies and plays a significant role in advancing sustainable energy solutions.

Application

The IRFB4310PBF is an N-channel MOSFET commonly used in various applications, including power supplies, motor drives, and inverters for renewable energy systems. Its low on-resistance and high-speed switching capabilities make it suitable for DC-DC converters, electric vehicles, and industrial automation. Additionally, it is utilized in high-frequency applications like audio amplifiers and RF amplifiers.

Equivalent

Equivalent products to the IRFB4310PBF MOSFET include the STP75NF75, AOD6N60, and FQP75N06. Ensure to check key specifications like voltage, current rating, Rds(on), and package type to confirm compatibility in your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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