IRFB4115PBF

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IRFB4115PBF

MOSFET N-CH 150V 104A TO220AB

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 104A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 11mOhm @ 62A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 120 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5270 pF @ 50 V
PowerDissipation(Max) 380W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFB4115PBF is a N-channel power MOSFET designed for high-efficiency switching applications. With a voltage rating of 150V and a continuous drain current of up to 55A, it is suitable for use in power management circuits, motor drives, and DC-DC converters. The device features a low on-resistance (R_DS(on)) of approximately 11.5 mΩ, which minimizes conduction losses and enhances thermal performance.
The IRFB4115PBF is housed in a TO-220 package, allowing for effective heat dissipation and easy mounting on heatsinks. Its fast switching capabilities make it ideal for high-frequency applications. Additionally, the part is RoHS compliant, ensuring it meets environmental standards.
Overall, the IRFB4115PBF provides a reliable solution for engineers seeking robust performance in demanding power applications.

Features

The IRFB4115PBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 55V maximum drain-source voltage (VDS).
2. Current Rating: Continuous drain current (ID) of up to 110A at 25°C, making it suitable for high-power applications.
3. On-Resistance: Low RDS(on) of approximately 6.5 mΩ, which reduces conduction losses and improves overall efficiency.
4. Gate Threshold Voltage: VGS(th) typically between 2V to 4V, allowing for easy interfacing with low-voltage control circuits.
5. Fast Switching Speed: Designed for rapid switching, beneficial for applications like DC-DC converters and motor drives.
6. Package: Available in TO-220 and D2PAK for effective heat dissipation.
7. RoHS Compliant: Free from hazardous substances, making it suitable for environmentally conscious designs.
These characteristics make the IRFB4115PBF ideal for applications in power management, renewable energy systems, and automotive electronics.

Package

The IRFB4115PBF is packaged in a TO-220 form factor, which features a metal tab for heat dissipation, making it suitable for high-power applications.

Pinout

The IRFB4115PBF is a N-channel MOSFET with a pin count of 4. The function of each pin is as follows:
1. Gate (G): This pin controls the MOSFET's switching on and off. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where the current flows out when the MOSFET is in the 'on' state. It connects to the load.
3. Source (S): This terminal serves as the return path for the current flowing through the MOSFET. It is typically connected to ground in low-side switching applications.
4. Body Diode (internal): While not a pin, the IRFB4115PBF includes an internal body diode between the drain and source, providing a path for current when the MOSFET is off, useful in applications like inductive loads.
The IRFB4115PBF is typically used in power switching applications due to its high efficiency and fast switching capabilities.

Manufacturer

The IRFB4115PBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in automotive, industrial power control, and secure mobile communications. The company focuses on developing and producing a wide range of semiconductor solutions, including power MOSFETs, IGBTs, and microcontrollers, which are used in various applications such as renewable energy, electric vehicles, and smart home technologies. Infineon is known for its emphasis on innovation and sustainability, contributing to advancements in energy efficiency and reducing carbon footprints across multiple industries.

Application

The IRFB4115PBF is an N-channel MOSFET commonly used in various applications, including power supplies, DC-DC converters, motor drives, and battery management systems. Its low on-resistance and high-speed switching capabilities make it suitable for high-efficiency power management in consumer electronics, automotive systems, and renewable energy solutions like solar inverters.

Equivalent

The IRFB4115PBF is a N-channel MOSFET. Equivalent products include the STP55NF06, AOD6N60, and FQD15N60. Always verify specifications like voltage, current rating, and Rds(on) for compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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