IRFB4110PBF

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IRFB4110PBF

MOSFET N-CH 100V 120A TO220AB

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.5mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 210 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 9620 pF @ 50 V
PowerDissipation(Max) 370W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFB4110PBF is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It features a low on-resistance (R_DS(on)) and high-speed switching capabilities, making it suitable for use in various applications such as DC-DC converters, motor drives, and power management systems.
This device has a maximum drain-source voltage (V_DS) rating of 100V and a continuous drain current (I_D) rating of up to 110A, allowing it to handle substantial power loads. The IRFB4110PBF is also characterized by its low gate charge, which minimizes switching losses, enhancing efficiency.
Its TO-220 package provides effective thermal management, facilitating heat dissipation in high-power applications. The "PBF" suffix denotes that the part is lead-free, complying with RoHS (Restriction of Hazardous Substances) standards. Overall, the IRFB4110PBF is a robust choice for engineers seeking reliable and efficient semiconductor solutions in demanding power applications.

Features

The IRFB4110PBF is an N-channel MOSFET designed for high efficiency and high-speed switching applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: It supports continuous drain current (I_D) of up to 110A at a temperature of 25°C.
3. Low R_DS(on): It exhibits a low on-resistance of approximately 4.5 mΩ, which reduces power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient control with lower gate drive voltages.
5. Fast Switching Speed: It features fast switching capabilities, making it suitable for applications such as DC-DC converters and motor drives.
6. Thermal Resistance: The device has a low thermal resistance, improving its performance in thermal management.
7. RoHS Compliant: Available in a TO-220 package, it is RoHS compliant, ensuring environmental safety.
These features make the IRFB4110PBF ideal for a variety of power electronics applications.

Package

The IRFB4110PBF is packaged in a TO-220 style package. This package type features a robust design suitable for high-power applications, providing efficient thermal management and electrical performance.

Pinout

The IRFB4110PBF is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET's operation; a voltage applied here allows current to flow between the drain and source.
2. Drain (D) - The terminal through which the main current flows out of the MOSFET.
3. Source (S) - The terminal through which the main current enters the MOSFET.
4. Tab (Thermal Pad) - Provides a means for heat dissipation; often connected to the source for better thermal performance.
5. Body Diode - Internal to the MOSFET; allows current to flow in the reverse direction when the MOSFET is off.
The MOSFET is designed for high-efficiency switching applications and has a low on-resistance, making it suitable for power management and motor control applications.

Manufacturer

The IRFB4110PBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in power semiconductors, automotive and industrial electronics, and secure communication technologies. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon has a strong focus on innovation and sustainability, providing solutions for various applications, including renewable energy, automotive, and the Internet of Things (IoT). The company is known for its high-performance products, which help to improve energy efficiency and enable advanced technologies across multiple sectors.

Application

The IRFB4110PBF is a N-channel MOSFET widely used in various application areas, including:
1. Power Supplies: For switching power supplies and converters.
2. Motor Control: In inverter circuits for DC motors and brushless DC motors.
3. Class D Audio Amplifiers: Enhancing efficiency in audio amplification.
4. Battery Management Systems: For power switching in battery chargers.
5. Electric Vehicles: As part of the power electronics for drive systems.
Its low on-resistance and high efficiency make it suitable for these applications.

Equivalent

Equivalent products to the IRFB4110PBF include the STP75NF75, FDBL70N15, and AOD7N60. These MOSFETs have similar voltage and current ratings, making them suitable substitutes. Always verify specific parameters like RDS(on), gate threshold voltage, and package type for compatibility in your application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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