IRFB4019PBF

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IRFB4019PBF

IRFB4019 - 12V-300V N-CHANNEL PO

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Spécifications

Package Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 17A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 95mOhm @ 10A, 10V
Vgs(th)(Max)@Id 4.9V @ 50µA
GateCharge(Qg)(Max)@Vgs 20 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 800 pF @ 50 V
PowerDissipation(Max) 80W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

IRFB4019PBF is a high-performance N-channel MOSFET designed for various power applications, including industrial and automotive systems. It features a low on-resistance (R_DS(on)) value, allowing for efficient switching and reduced power loss during operation. The device can handle high voltages (up to 75V) and currents (up to 120A), making it suitable for applications such as motor drives, power supplies, and lighting control.
The IRFB4019PBF is packaged in a TO-220 form factor, facilitating effective heat dissipation and easy mounting onto circuit boards. Its fast switching capabilities contribute to improved system efficiency and reduced heat generation. The PBF designation indicates that the MOSFET is Pb-free and compliant with RoHS standards, making it environmentally friendly.
Overall, the IRFB4019PBF is widely used in applications requiring robust performance, reliability, and efficiency in power management.

Features

The IRFB4019PBF is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 49A.
3. Low R_DS(on): Offers a low on-resistance of approximately 7.5 mΩ, which enhances efficiency by reducing power losses.
4. Fast Switching: Designed for rapid switching applications, suitable for converters and inverters.
5. Temperature Range: Operates effectively over a wide temperature range from -55°C to 170°C, ensuring reliability in various environments.
6. Package Type: Available in a TO-220 package, providing good thermal performance and ease of heat dissipation.
This MOSFET is ideal for applications such as power management systems, motor drives, and high-speed switching applications.

Package

The IRFB4019PBF is packaged in a TO-220 package type. This package is designed for efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The IRFB4019PBF is an N-channel MOSFET with a total of 5 pins. Here are the pin functions:
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied to the gate turns the MOSFET on or off.
2. Drain (D): This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the low side of the load. The current flows into the source from the drain.
4. Body Diode (internal): The MOSFET also has an intrinsic body diode between the drain and source, allowing current to flow in the reverse direction when needed.
5. Tab/Heatsink: The tab is used for thermal management and should be connected to a heatsink for efficient heat dissipation.
The IRFB4019PBF is suitable for high-efficiency applications and has a rated maximum drain-source voltage of 100V and a continuous drain current of up to 80A.

Manufacturer

The IRFB4019PBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor solutions, including power electronics, sensors, microcontrollers, and automotive components. The company focuses on applications in automotive, industrial, and multi-market sectors, emphasizing energy efficiency and performance. Infineon is known for its innovation in power management and has a strong presence in the global semiconductor market.

Application

The IRFB4019PBF is an N-channel MOSFET commonly used in applications such as power supplies, motor drives, and DC-DC converters. Its high voltage and current ratings make it suitable for automotive electronics, renewable energy systems, and industrial automation. Additionally, it is used in audio amplifiers and LED lighting systems for efficient switching and control.

Equivalent

The IRFB4019PBF is an N-channel MOSFET. Equivalent products include the STP55NF06, AOD4N60, FQD20N60, and FDS6680. Always check specific electrical characteristics like voltage, current ratings, Rds(on), and package type for compatibility.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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