IRFB3306PBF

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IRFB3306PBF

MOSFET N-CH 60V 120A TO220AB

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.2mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 150µA
GateCharge(Qg)(Max)@Vgs 120 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4520 pF @ 50 V
PowerDissipation(Max) 230W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

IRFB3306PBF is an N-channel MOSFET designed for high-efficiency switching applications. It features a low on-resistance (R_DS(on)), allowing for reduced power loss during operation, which is crucial in power management and conversion circuits. With a high voltage rating, typically around 60V, and a continuous current rating of up to 120A, this MOSFET is suitable for various applications, including motor control, power supplies, and DC-DC converters.
The "PBF" designation indicates that it is lead-free and compliant with RoHS standards, making it environmentally friendly. Its compact package allows for ease of integration into circuit designs, facilitating better thermal performance and reliability. Overall, IRFB3306PBF is favored in the electronics industry for its efficiency, robustness, and versatility in handling demanding electrical loads.

Features

The IRFB3306PBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V, suitable for various power applications.
2. Current Rating: Continuous drain current (I_D) of 110A, allowing significant load handling.
3. R_DS(on): Low on-resistance of approximately 4.5 mΩ at V_GS = 10V, minimizing conduction losses.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, enabling efficient switching.
5. Package: Available in TO-220 and D2PAK, providing flexibility in design and thermal management.
6. Fast Switching Speed: Suitable for high-frequency applications, enhancing efficiency in power conversion.
7. Thermal Resistance: Low thermal resistance, improving heat dissipation and reliability in demanding environments.
These features make the IRFB3306PBF ideal for applications such as power supplies, motor control, and automotive systems.

Package

The IRFB3306PBF is packaged in a TO-220 type package. This package type is commonly used for power MOSFETs, providing good thermal management and ease of mounting in various applications.

Pinout

The IRFB3306PBF is an N-channel MOSFET with a total of 4 pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D): The current flows out of this pin when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the load; current flows into this pin when the MOSFET is conducting.
4. Tab (Heat Sink): This is not a pin in the traditional sense, but serves as a thermal management feature to dissipate heat generated during operation.
The IRFB3306PBF is commonly used in applications such as power management and motor control due to its high current and voltage ratings.

Manufacturer

The IRFB3306PBF is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Founded in 1999, Infineon is known for its innovations in power semiconductors, automotive electronics, and security technologies. The company focuses on designing and manufacturing products that enhance energy efficiency, connectivity, and security in a range of applications, including industrial, automotive, and consumer electronics. Infineon operates worldwide and is recognized for its commitment to sustainability and technological advancement in the semiconductor industry.

Application

The IRFB3306PBF is an N-channel MOSFET primarily used in high-efficiency power applications. Key application areas include electric vehicles, power supplies, motor drives, and renewable energy systems like solar inverters. Its low on-resistance and fast switching capabilities make it suitable for DC-DC converters, industrial automation, and other power management systems.

Equivalent

Equivalent products to the IRFB3306PBF MOSFET include the FDB7030, STP75NF75, AUIRFB3306, and BUK7Y3R3-60. These alternatives typically have similar voltage and current ratings, making them suitable replacements in various applications. Be sure to verify specific parameters such as Rds(on) and gate threshold voltage for compatibility.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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