IRFB3306GPBF

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IRFB3306GPBF

MOSFET N-CH 60V 120A TO220AB

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Spécifications

Supplier Infineon Technologies
Package Tube
Series HEXFET®
ProductStatus Not For New Designs
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.2mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 150µA
GateCharge(Qg)(Max)@Vgs 120 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4520 pF @ 50 V
PowerDissipation(Max) 230W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFB3306GPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It is part of International Rectifier's family of MOSFETs, known for their low on-resistance and fast switching capabilities. With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of up to 100A, it is suitable for various applications, including power supplies, motor drives, and automotive systems.
The "GPBF" suffix indicates that this MOSFET is RoHS compliant, meaning it is free from hazardous substances. Key features include low gate charge, high-speed switching, and thermal stability, making it effective in energy-efficient designs. Its TO-220 packaging allows for effective heat dissipation, enhancing reliability in demanding environments. Overall, the IRFB3306GPBF is a robust choice for designers seeking efficient and reliable performance in power electronics.

Features

The IRFB3306GPBF is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Continuous Drain Current: The MOSFET can handle up to 110A of continuous current, allowing for robust performance in demanding environments.
3. Low R_DS(on): With a typical on-resistance of 0.015 ohms, it minimizes conduction losses, enhancing overall efficiency.
4. Fast Switching Speed: This device supports high-speed switching, making it suitable for applications in power conversion and motor control.
5. Thermal Characteristics: It features a high thermal performance with a maximum junction temperature of 175°C, allowing for reliable operation under high-temperature conditions.
6. TO-220 Package: The package facilitates effective heat dissipation and easy mounting in various circuit designs.
7. RoHS Compliant: It meets environmental standards, making it suitable for modern electronic applications.
These features make the IRFB3306GPBF ideal for use in power supplies, inverters, and automotive applications.

Package

The IRFB3306GPBF is packaged in a TO-220 form factor. This package type is commonly used for power transistors, offering good thermal performance and easy mounting on heatsinks for enhanced heat dissipation.

Pinout

The IRFB3306GPBF is a N-channel MOSFET from Infineon Technologies. It has a pin count of 4. The pin configuration and their functions are as follows:
1. Gate (G): This is the control terminal that turns the MOSFET on or off by applying a voltage.
2. Drain (D): This terminal is where the load is connected; it carries the current when the device is on.
3. Source (S): This terminal is connected to the ground or negative side of the power supply; it is the return path for current.
4. Tab (T): This is an exposed metal tab used for heat dissipation; it is typically connected to the source.
The IRFB3306GPBF is designed for high-efficiency applications and can handle high currents and voltages, making it suitable for power management in various electronic devices.

Manufacturer

The IRFB3306GPBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security chips. The company focuses on various sectors such as automotive, industrial power control, and the Internet of Things (IoT). Infineon is known for its innovative technologies in power management and energy efficiency, catering to both consumer and industrial applications. Established in 1999, it has grown to become a key player in the global semiconductor market.

Application

The IRFB3306GPBF is an N-channel MOSFET primarily used in applications such as power supplies, motor drives, and DC-DC converters. Its high-speed switching capabilities make it suitable for efficient power management in automotive, industrial, and renewable energy systems. Additionally, it is utilized in battery management systems and electric vehicles for its low on-resistance and high thermal performance.

Equivalent

The IRFB3306GPBF is a N-channel MOSFET. Equivalent products include the STP330N6F3, FQP30N06L, and AOD6N60. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility for your specific application.

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