IRFB3207PBF

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IRFB3207PBF

MOSFET N-CH 75V 170A TO220AB

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Spécifications

Package Bulk,Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V
Current-ContinuousDrain(Id)@25°C 170A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.5mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 260 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 7600 pF @ 50 V
PowerDissipation(Max) 330W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFB3207PBF is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management applications. It features a low on-resistance (RDS(on)), which minimizes power loss and heat generation during operation, making it ideal for switching power supplies, automotive applications, and other high-efficiency circuits. The device can handle high voltages (up to 75V) and has a high continuous drain current rating, enabling it to drive heavy loads effectively.
Its fast switching speeds facilitate efficient conversion and control of power, while the PBF designation indicates that it is lead-free, aligning with modern environmental standards. The IRFB3207PBF is packaged in a TO-220 form factor, allowing for easy mounting and good thermal performance. Overall, it is a reliable choice for engineers looking to improve the efficiency and reliability of their power electronic designs.

Features

The IRFB3207PBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: 75V maximum drain-source voltage (Vds).
2. Current Rating: Continuous drain current (Id) of 140A at 25°C, allowing for robust power handling.
3. RDS(on): Low on-resistance of approximately 5.5 mΩ at Vgs = 10V, enabling reduced conduction losses.
4. Gate Threshold Voltage: Vgs(th) ranges from 2V to 4V, suitable for low-voltage drive circuits.
5. Fast Switching Speed: Designed for high-speed switching, making it ideal for applications like DC-DC converters.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
7. Applications: Commonly used in automotive, industrial, and power management applications.
These features position the IRFB3207PBF as a reliable choice for efficient power conversion and management tasks in various electronic systems.

Package

The IRFB3207PBF is typically packaged in a TO-220 form factor, which is a type of package used for power MOSFETs, enabling effective heat dissipation and easy mounting on heatsinks.

Pinout

The IRFB3207PBF is a N-channel MOSFET with a total of 8 pins. Its pin configuration and functions are as follows:
1. Gate (G): Controls the MOSFET's switching on and off.
2. Drain (D): The output terminal where current flows out from the MOSFET.
3. Source (S): The terminal where current enters the MOSFET.
4. Body Diode: Integrated within the structure, allows current to flow from Drain to Source when the MOSFET is off, providing a path for inductive loads.
This MOSFET is widely used in power applications such as DC-DC converters, motor drives, and inverters due to its high efficiency and low on-resistance characteristics. It can handle high voltage and current, making it suitable for various power management applications.

Manufacturer

The IRFB3207PBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company is known for its innovations in automotive, industrial, and communication technologies, focusing on energy efficiency and reliability. Infineon operates in various markets, including automotive electronics, power management, security, and IoT applications. Its products are widely used across multiple industries, making it a key player in the semiconductor sector.

Application

The IRFB3207PBF is an N-channel MOSFET commonly used in applications such as power supplies, motor drives, DC-DC converters, and inverter circuits. Its high efficiency and low on-resistance make it suitable for automotive, industrial, and renewable energy systems. Additionally, it can be found in power management for consumer electronics and electric vehicles.

Equivalent

Equivalent products to the IRFB3207PBF MOSFET include the STP75NF75, FQP75N75, and IPP75R600P7. These MOSFETs offer similar voltage and current ratings, but always verify specific parameters like RDS(on) and VGS ratings to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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