IRFB31N20DPBF

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IRFB31N20DPBF

MOSFET N-CH 200V 31A TO220AB

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Spécifications

Supplier Rochester Electronics, LLC,Infineon Technologies
Package Bulk,Tube
Series HEXFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 31A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 82mOhm @ 18A, 10V
Vgs(th)(Max)@Id 5.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 107 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 2370 pF @ 25 V
PowerDissipation(Max) 3.1W (Ta), 200W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFB31N20DPBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power applications. It features a maximum drain-source voltage of 200V and a continuous drain current rating of 31A at a temperature of 25°C. The device is constructed using a silicon technology that offers low on-resistance (R_DS(on)), which minimizes power loss and improves thermal performance.
The IRFB31N20DPBF is commonly used in applications such as switching power supplies, motor drives, and other power management systems due to its fast switching capabilities and high thermal stability. The "DPBF" designation indicates that the MOSFET is RoHS compliant, meaning it is free from hazardous substances, making it suitable for use in environmentally sensitive applications.
Overall, the IRFB31N20DPBF is a reliable choice for engineers seeking efficient and robust solutions in high-voltage power electronic circuits.

Features

The IRFB31N20DPBF is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 31A, providing robust performance in power circuits.
3. R_DS(on): Low on-resistance of approximately 0.075 ohm at a gate-source voltage (V_GS) of 10V, which minimizes conduction losses.
4. Fast Switching: Designed for rapid switching capabilities, enhancing efficiency in power conversion applications.
5. Thermal Performance: It has a maximum junction temperature of 150°C, with a TO-220 package that aids in effective heat dissipation.
6. Body Diode: Features an intrinsic body diode, allowing for reverse current flow, useful in applications like H-bridges.
7. Applications: Commonly used in power supplies, motor drives, and inverters.
This MOSFET is ideal for energy-efficient designs in various electronic applications.

Package

The IRFB31N20DPBF is packaged in a TO-220 form factor. This package type provides effective heat dissipation and is commonly used in power applications for transistors and MOSFETs.

Pinout

The IRFB31N20DPBF is an N-channel MOSFET with a pin count of 4. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this terminal allows current to flow between the Drain and Source.
2. Drain (D): This pin connects to the load and carries the current when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for current flowing through the MOSFET.
4. Tab (T): The tab is typically connected to the Source and is used for thermal dissipation.
The IRFB31N20DPBF is designed for high-efficiency applications, making it suitable for power management and switching applications.

Manufacturer

The IRFB31N20DPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in semiconductor solutions for various applications, including automotive, industrial power control, and the Internet of Things (IoT). The company is known for its commitment to innovation and sustainability, providing high-performance components like MOSFETs, IGBTs, and microcontrollers. Infineon's products are widely utilized in energy-efficient systems and advanced automotive technologies, making it a key player in the semiconductor industry.

Application

The IRFB31N20DPBF is a high-speed N-channel MOSFET commonly used in various applications, including power supplies, DC-DC converters, motor drives, and inverters. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs in automotive, industrial, and renewable energy systems. Additionally, it is utilized in consumer electronics for power management and switching applications.

Equivalent

Equivalent products to the IRFB31N20DPBF include the STP31NF20, FQP31N20, and IRF320. These MOSFETs have similar voltage and current ratings, typically around 200V and 31A, but it's essential to check specific parameters like R_DS(on) and switching characteristics for compatibility in your application. Always verify the datasheets for precise specifications.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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