IRFB3077PBF

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IRFB3077PBF

IRFB3077 - 12V-300V N-CHANNEL PO

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Spécifications

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3.3mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 220 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 9400 pF @ 50 V
PowerDissipation(Max) 370W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFB3077PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance switching applications. It features low on-resistance (RDS(on)), enabling efficient power management with minimal energy loss. The device is capable of handling significant drain current (up to 77A) and has a maximum drain-source voltage (VDS) rating of 75V, making it suitable for various applications including power supplies, motor drives, and other power management systems.
The IRFB3077PBF is packaged in a TO-220 format, facilitating effective heat dissipation. Its fast switching capabilities and high-speed performance make it ideal for both low and high-frequency applications. Additionally, it is RoHS compliant, ensuring environmental safety.
Overall, the IRFB3077PBF is a versatile component widely used in automotive, industrial, and consumer electronics, offering reliability and efficiency in power management solutions.

Features

The IRFB3077PBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (VDS) of 75V, making it suitable for a variety of power applications.
2. Current Rating: Continuous drain current (ID) of 77A, allowing it to handle significant power loads.
3. On-Resistance: Low RDS(on) typically around 0.027Ω at VGS = 10V, enhancing efficiency by minimizing conduction losses.
4. Gate Threshold Voltage: VGS(th) ranges from 2V to 4V, which allows for compatibility with low-voltage drive circuits.
5. Package Type: Available in TO-220 and other package options for thermal performance and ease of handling.
6. Fast Switching Speeds: Optimized for rapid switching, making it suitable for use in converters and motor drives.
7. Thermal Resistance: Low thermal resistance ensures effective heat dissipation, improving reliability and performance in high-temperature environments.
These features make the IRFB3077PBF ideal for power management, including automotive, industrial, and consumer applications.

Package

The IRFB3077PBF is packaged in a TO-220 format, which is a standard package type used for power MOSFETs. This package features good thermal performance and is designed for easy mounting on heat sinks for efficient heat dissipation.

Pinout

The IRFB3077PBF is a N-channel MOSFET with a total of 8 pins. Here is a brief description of the pin functions:
1. Gate (G): Controls the MOSFET's switching on and off.
2. Drain (D): The output terminal where the current flows out when the device is on.
3. Source (S): The terminal through which current enters the MOSFET.
4. Body Diode: Integrated between the Drain and Source, allowing current to flow in reverse when the MOSFET is off.
The remaining pins are typically used for various configurations and internal connections, depending on the specific package type (such as TO-220). The IRFB3077PBF is designed for high-efficiency power applications, featuring low R_DS(on) and high current capabilities. It is commonly used in switching power supplies, motor drives, and other applications requiring efficient power management.

Manufacturer

The IRFB3077PBF is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in power semiconductors, microcontrollers, and sensors, serving various industries including automotive, industrial, and consumer electronics. The company focuses on developing innovative solutions for energy efficiency, mobility, and security, contributing to advancements in technology and sustainability. Infineon is known for its expertise in power management and is a prominent player in the semiconductor market.

Application

The IRFB3077PBF is an N-channel MOSFET commonly used in power management applications, such as DC-DC converters, motor drives, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for automotive applications, renewable energy systems, and industrial automation. Additionally, it is used in high-efficiency inverters and LED drivers.

Equivalent

Equivalent products to the IRFB3077PBF include the STP75NF75, FQP75N75, and the AOD8N75. These MOSFETs share similar specifications, such as voltage and current ratings, making them suitable substitutes in various applications. Always verify specific parameters like RDS(on) and gate charge to ensure compatibility.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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