IRFB260NPBF

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IRFB260NPBF

MOSFET N-CH 200V 56A TO220AB

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 56A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 40mOhm @ 34A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 220 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4220 pF @ 25 V
PowerDissipation(Max) 380W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRFB260NPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a maximum drain-source voltage (V_DS) of 260V and a continuous drain current (I_D) of up to 50A, making it suitable for power management systems, switch-mode power supplies, and motor control applications.
With a low on-state resistance (R_DS(on)), typically around 0.075 ohms, the IRFB260NPBF offers reduced power loss during operation, enhancing overall efficiency. Its fast switching capabilities allow for high-frequency operation, essential for modern electronic designs.
The device is housed in a TO-220 package, facilitating effective heat dissipation, and is suitable for mounting on heatsinks for thermal management. Additionally, the "NPBF" designation indicates that it is lead-free and compliant with RoHS standards, making it environmentally friendly.
Overall, the IRFB260NPBF is a versatile and efficient choice for various high-voltage applications in the electronics industry.

Features

The IRFB260NPBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 160V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 50A, providing robust performance in power circuits.
3. Low On-Resistance: With a typical R_DS(on) of 0.075 Ohms at V_GS = 10V, it ensures minimal power loss during operation.
4. Fast Switching: Designed for quick switching applications, it supports efficient operation in PWM circuits.
5. Thermal Performance: The package design allows for effective heat dissipation, with a maximum junction temperature of 175°C.
6. TO-220 Package: It comes in a TO-220 package, facilitating easy heat management and assembly.
This makes the IRFB260NPBF suitable for use in power supplies, motor drives, and other high-efficiency applications.

Package

The IRFB260NPBF is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing good thermal performance and ease of mounting to heat sinks for better heat dissipation.

Pinout

The IRFB260NPBF is an N-channel MOSFET with a total of 5 pins. The pin configuration is as follows:
1. Gate (G): The control terminal used to turn the MOSFET on or off.
2. Drain (D): The terminal where the current flows out when the device is on.
3. Source (S): The terminal where the current enters when the device is conducting.
The device is designed for high-speed switching applications, featuring low on-resistance and high current handling capabilities, making it suitable for power management, motor drives, and high-efficiency switching applications. Its maximum ratings include a V_DS (drain-source voltage) of 100V and an I_D (continuous drain current) of up to 70A, ensuring robust performance in various applications.

Manufacturer

The IRFB260NPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in developing and producing a wide range of semiconductor solutions, including power management, automotive, and security applications. The company is known for its innovation in power semiconductors, particularly in MOSFETs and IGBTs, catering to various industries such as automotive, industrial, and consumer electronics. Infineon plays a significant role in enabling energy efficiency and sustainability through its advanced technologies.

Application

The IRFB260NPBF is an N-channel MOSFET primarily used in power applications such as DC-DC converters, motor drives, and inverters. Its high efficiency and fast switching capabilities make it suitable for automotive, industrial, and renewable energy systems, including solar inverters and battery management systems. Additionally, it can be utilized in high-frequency applications and for load switching in power supplies.

Equivalent

The IRFB260NPBF is an N-channel MOSFET with a maximum V_DS of 75V and R_DS(on) of 0.045Ω. Equivalent products include the STP75NF75, AUIRF3205, and FQP75N75. Always verify specifications to ensure compatibility with your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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