IRF9Z24NPBF

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IRF9Z24NPBF

MOSFET P-CH 55V 12A TO220AB

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 175mOhm @ 7.2A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 19 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 350 pF @ 25 V
PowerDissipation(Max) 45W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRF9Z24NPBF is a component of the IRF (Interferon Regulatory Factor) family, specifically designed as a part of the immune response mechanism. It plays a crucial role in the regulation of genes involved in the immune response, particularly in response to viral infections and inflammatory signals. IRF9 acts as a transcription factor, which means it binds to specific DNA sequences to control the transcription of downstream genes, particularly those activated by type I interferons.
The "Z24NPBF" designation typically refers to the specific packaging or form of the product, often indicated by manufacturers to denote features such as temperature rating, lead type, or compatibility with various applications. This component is widely used in research and therapeutic contexts, particularly in studies related to immunology, virology, and cancer research. Understanding IRF9's function can provide insights into immune system regulation and potential therapeutic targets for diseases characterized by immune dysregulation.

Features

The IRF9Z24NPBF is an N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (Vds) of 24V.
2. Current Rating: The maximum continuous drain current (Id) can reach up to 9A, suitable for moderate power applications.
3. Low RDS(on): Offers a low on-resistance, which minimizes conduction losses and improves efficiency.
4. Fast Switching: Suitable for high-speed switching applications, enhancing performance in power circuits.
5. Package: Available in a compact surface mount package, facilitating easy integration into designs.
These attributes make the IRF9Z24NPBF ideal for use in DC-DC converters, motor drives, and other electronic circuits requiring reliable and efficient switching. Always refer to the manufacturer's datasheet for detailed specifications and thermal characteristics.

Package

The IRF9Z24NPBF is typically packaged in a TO-220 type package. This package is designed for power applications, offering effective heat dissipation and easy mounting for enhanced thermal management.

Pinout

The IRF9Z24NPBF is a N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplification in electronic circuits. Key specifications include:
- Pin Count: 8
- Package Type: TO-220
- Key Functions:
- Gate (G): Controls the MOSFET's conductive state.
- Drain (D): The output terminal where current exits when the MOSFET is on.
- Source (S): The terminal where current enters when the MOSFET is on.
- Thermal and mounting pins: Provide heat dissipation and secure the device on a PCB.
The IRF9Z24NPBF is designed for high-speed switching applications, typically used in power management and motor control systems. Its characteristics include a low on-resistance and high-speed operation, making it suitable for various applications in power electronics.

Manufacturer

The IRF9Z24NPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in developing semiconductor solutions for various sectors, including automotive, industrial, and consumer electronics. The company is known for its expertise in power semiconductors, microcontrollers, and sensors, playing a pivotal role in enabling energy efficiency and connectivity in modern technologies. Infineon operates worldwide and is recognized for its innovation in areas such as power management, automotive safety, and smart mobility solutions.

Application

The IRF9Z24NPBF is a high-speed N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, power supplies, motor drives, and battery management systems. It is suitable for automotive, industrial, and consumer electronics due to its efficient switching capabilities and thermal performance.

Equivalent

The IRF9Z24NPBF is an N-channel MOSFET. Equivalent products include the STP9NK50Z, FQP30N06L, and VSS9120. Always verify specifications like voltage, current, and RDS(on) before substituting to ensure compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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