IRF9910TRPBF

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IRF9910TRPBF

MOSFET 2N-CH 20V 10A/12A 8SO

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  • Mfr. Partie #IRF9910TRPBF
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Spécifications

Series HEXFET®
Part Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10A, 12A
Rds On (Max) @ Id, Vgs 9.3mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Product Number IRF99

Vue d'ensemble

Description

The IRF9910TRPBF is an N-channel MOSFET designed for high-efficiency applications. It features a low on-resistance (R_DS(on)) of approximately 4.5 mΩ at a gate voltage of 10V, allowing for reduced power loss and improved thermal performance. With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current rating of up to 80A, it is suitable for applications such as DC-DC converters, motor drivers, and power management circuits.
The device is housed in a TO-220 package, which facilitates effective heat dissipation, and is RoHS compliant, making it environmentally friendly. The IRF9910TRPBF exhibits fast switching speeds, making it ideal for high-frequency applications, and its gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy integration with various drive circuits.
Overall, the IRF9910TRPBF is a robust choice for designers seeking reliable performance in demanding electronic systems.

Features

The IRF9910TRPBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) of up to 56A.
3. R_DS(on): Low on-resistance, typically around 9.5 mΩ, which minimizes power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): Low threshold voltage, typically between 2V and 4V, enabling efficient switching.
5. Package: Available in a TO-220 package, facilitating easy heat dissipation and assembly.
6. Switching Speed: Fast switching capabilities, making it suitable for applications like power management, DC-DC converters, and motor control.
7. Thermal Characteristics: Designed with a high thermal performance, allowing for effective heat management.
These features make the IRF9910TRPBF suitable for a wide range of applications, including automotive, industrial, and consumer electronics.

Package

The IRF9910TRPBF is packaged in a TO-220 form factor.

Pinout

The IRF9910TRPBF is a N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows or prevents current flow between the drain and source.
2. Drain (D): This is the terminal where the current enters the MOSFET from the load. The drain current flows when the MOSFET is turned on.
3. Source (S): This is the terminal where the current exits the MOSFET. It connects to the ground or negative supply in typical applications.
The IRF9910TRPBF is designed for high-speed switching applications and can handle high voltages and currents, making it suitable for various power management and switching applications in electronics.

Manufacturer

The manufacturer of the IRF9910TRPBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in producing a wide range of semiconductor products, including power management, sensors, and automotive electronics. Infineon focuses on areas such as energy efficiency, mobility, and security solutions, serving diverse markets like automotive, industrial, and consumer electronics. They are recognized for their innovation and commitment to advancing semiconductor technology, making them a key player in the global electronics industry.

Application

The IRF9910TRPBF is a N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor control, power amplifiers, and high-frequency switching applications. It is suitable for use in power supplies, automotive systems, and energy-efficient devices due to its low on-resistance and fast switching capabilities.

Equivalent

The IRF9910TRPBF is an N-channel MOSFET. Equivalent products include the STP80NF55, AUIRF9910, and FQP50N06. Always verify specifications such as voltage, current ratings, and Rds(on) for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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