IRF9530PBF

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IRF9530PBF

MOSFET P-CH 100V 12A TO220AB

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Spécifications

Package Tube
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 300mOhm @ 7.2A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 38 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 860 pF @ 25 V
PowerDissipation(Max) 88W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRF9530PBF is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in high-speed switching applications. It features a maximum drain-source voltage (Vds) of 55V and a continuous drain current (Id) rating of up to 33A at 25°C. The device has a low on-resistance (Rds(on)) of approximately 0.08 ohms, which enhances efficiency by minimizing power losses during operation.
Key applications include power management, motor control, and switching power supplies. The IRF9530PBF is packaged in a TO-220 format, allowing for effective heat dissipation. It is also RoHS-compliant, making it suitable for environmentally friendly applications. The device operates well at high frequencies, making it ideal for applications requiring fast switching capabilities.
In summary, the IRF9530PBF is a versatile, efficient MOSFET commonly used in various electronic circuits, providing reliable performance in demanding environments.

Features

The IRF9530PBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 55V.
2. Current Rating: Continuous drain current (I_D) of 30A, allowing it to handle substantial loads.
3. R_DS(on): Low on-resistance of around 0.1 ohms at V_GS = 10V, which minimizes power loss and heat generation.
4. Fast Switching: High-speed switching capabilities make it suitable for applications like power supplies and motor controls.
5. Thermal Performance: Good thermal stability with a maximum junction temperature of 175°C.
6. Package Type: Available in TO-220 and other packages, facilitating easy heat dissipation and integration into various designs.
7. Gate Threshold Voltage: Suitable for logic-level operation with a gate threshold voltage (V_GS(th)) of 2 to 4V.
These features make the IRF9530PBF ideal for applications in power management, industrial automation, and automotive systems.

Package

The IRF9530PBF is typically packaged in a TO-220 format. This package type allows for efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The IRF9530PBF is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - The control pin that allows you to turn the MOSFET on and off by applying a voltage.
2. Drain (D) - The pin through which the load current flows when the MOSFET is in the 'on' state.
3. Source (S) - The pin connected to the source of the current; it serves as the return path for current when the device is conducting.
4. Body Diode (Intrinsic) - Not a pin but an internal diode between the Drain and Source that allows current to flow in the reverse direction.
Typical applications include power management, switching, and amplification in various electronic circuits. The IRF9530PBF is known for its low on-resistance and high-speed switching capabilities.

Manufacturer

The IRF9530PBF is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its focus on innovation and sustainability, providing products that enhance energy efficiency and connectivity in various electronic devices. Infineon's portfolio includes MOSFETs, IGBTs, microcontrollers, and sensors, catering to diverse industries such as automotive, industrial automation, and consumer electronics.

Application

The IRF9530PBF is a N-channel MOSFET primarily used in power management applications, including switching power supplies, motor control, and DC-DC converters. Its high efficiency and fast switching capabilities make it suitable for load switching, battery management systems, and inverters. Additionally, it can be found in audio amplifiers and automotive electronics for various control and protection circuits.

Equivalent

Equivalent products for the IRF9530PBF MOSFET include the STP75NF75, FQP50N06, and RFP30N06. When selecting an alternative, ensure compatibility in voltage, current ratings, and RDS(on) specifications. Always check the datasheet for specific characteristics to match your application requirements.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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