IRF9362TRPBF

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IRF9362TRPBF

MOSFET 2P-CH 30V 8A 8SO

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Spécifications

Series HEXFET®
Part Status Last Time Buy
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Product Number IRF9362

Vue d'ensemble

Description

The IRF9362TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power electronics applications. It features a low on-resistance, high-speed switching capability, and is suitable for various applications including power management, motor control, and DC-DC converters.
Key specifications include a maximum drain-source voltage (V_ds) of 60V, a continuous drain current (I_d) of up to 62A, and a low on-resistance (R_ds(on)) typically around 10 mΩ. This device is housed in a TO-220 package, allowing for efficient heat dissipation and easy mounting.
The IRF9362TRPBF is also RoHS compliant, making it suitable for environmentally friendly applications. Its fast switching speeds and high efficiency make it ideal for high-frequency applications, reducing energy losses in power systems. Overall, the IRF9362TRPBF is a versatile component for engineers looking to enhance the performance of their electronic designs.

Features

The IRF9362TRPBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for a variety of power switching applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 62A, providing robust performance in demanding conditions.
3. On-Resistance: It exhibits low on-resistance (Rds(on)) of approximately 0.022 Ohms at Vgs = 10V, minimizing power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2-4V, allowing for efficient switching with lower drive voltages.
5. Package: It is available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching: The MOSFET supports fast switching speeds, making it ideal for applications like motor control, power supplies, and DC-DC converters.
Overall, the IRF9362TRPBF is designed for high-performance applications requiring efficient power management.

Package

The IRF9362TRPBF is packaged in a TO-220 format, which is a metal can package designed for high-power applications. This type of package provides good thermal performance and is suitable for mounting on heatsinks.

Pinout

The IRF9362TRPBF is a high-speed N-channel MOSFET designed for power management applications. It features a total of 8 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where current flows out.
3. Source (S) - The input terminal where current flows in.
4. Body Diode (Internal) - Provides flyback functionality in inductive loads.
The device is particularly used in applications such as DC-DC converters, motor drives, and power management systems due to its low R_DS(on) and fast switching capabilities. It is available in a TO-220 package, making it suitable for heat dissipation in high-power applications.
For further specifics such as electrical characteristics and thermal performance, referring to the manufacturer's datasheet is recommended.

Manufacturer

The IRF9362TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer that specializes in producing a range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its high-performance power semiconductors, microcontrollers, and sensors. Infineon is headquartered in Neubiberg, Germany, and is recognized for its innovation in power management and energy efficiency technologies. The IRF9362TRPBF is specifically a high-speed MOSFET used in power applications, highlighting Infineon's focus on delivering advanced semiconductor products that meet the demands of modern electronic designs.

Application

The IRF9362TRPBF is a power MOSFET commonly used in various applications, including power management, DC-DC converters, motor control, and switching power supplies. Its high efficiency and fast switching capabilities make it suitable for low-voltage applications, such as consumer electronics, renewable energy systems, and automotive power circuits. Additionally, it is utilized in load switching and high-frequency applications due to its low on-resistance and high-speed performance.

Equivalent

The IRF9362TRPBF is a N-channel MOSFET. Equivalent products include the STP36NF06, AOD6N60, and FQP30N06L. Ensure to check specifications like voltage, current ratings, and package type for compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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