IRF9310PBF

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IRF9310PBF

MOSFET P-CH 30V 20A 8SO

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Discontinued at Digi-Key
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 4.6mOhm @ 20A, 10V
Vgs(th)(Max)@Id 2.4V @ 100µA
GateCharge(Qg)(Max)@Vgs 165 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5250 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SO

Vue d'ensemble

Description

The IRF9310PBF is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-speed switching applications. It features a low on-resistance (R_DS(on)) which minimizes power loss and enhances efficiency in circuits. The MOSFET can handle high voltages, typically up to 30V, and supports high current levels, making it suitable for various applications such as power management, motor control, and load switching.
Key specifications include a maximum continuous drain current of around 38A and a gate threshold voltage (V_GS(th)) that allows for easy interfacing with logic-level signals. The IRF9310PBF is housed in a TO-220 package for effective thermal dissipation and is RoHS compliant, ensuring it meets environmental regulations. This MOSFET is widely used in consumer electronics, automotive applications, and industrial equipment due to its robustness and reliability.

Features

The IRF9310PBF is an N-channel MOSFET designed for high-speed switching and power management applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) of 55A at 25°C.
3. R_DS(on): Low on-resistance, typically around 0.020 ohms, ensuring efficient power dissipation.
4. Gate Threshold Voltage (V_GS(th)): Typically between 1V to 2V, allowing for easy driving with standard logic levels.
5. Fast Switching Speed: Suitable for applications requiring quick turn-on and turn-off times.
6. Package Type: Available in DPAK and TO-220 packages, facilitating heat dissipation.
7. Robustness: Features a high avalanche rating and is designed to handle repetitive avalanche conditions.
8. Applications: Commonly used in DC-DC converters, motor drivers, and power management circuits.
These characteristics make the IRF9310PBF ideal for automotive, industrial, and consumer electronics applications.

Package

The IRF9310PBF is typically available in a TO-220 package type. This package is designed for power MOSFETs, providing efficient heat dissipation and ease of mounting on heatsinks for better thermal management.

Pinout

The IRF9310PBF is a N-channel MOSFET with a total pin count of 5. Its pin functions are as follows:
1. Gate (G): Controls the switching action of the MOSFET.
2. Drain (D): Connects to the load; current flows out of this terminal when the MOSFET is on.
3. Source (S): Connects to ground or the negative side of the load; current flows into this terminal when the MOSFET is on.
The IRF9310PBF is designed for high-speed switching applications and can handle significant voltage and current levels, making it suitable for power management and switching power supplies.

Manufacturer

The IRF9310PBF is manufactured by Infineon Technologies AG, a multinational semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in the development and production of a wide range of semiconductor and system solutions, including power management, automotive, and security applications. The company focuses on creating innovative technologies for various industries such as automotive, industrial, and consumer electronics. Infineon is recognized for its expertise in power semiconductor devices, including MOSFETs and IGBTs, which are essential for efficient energy management and conversion.

Application

The IRF9310PBF is a N-channel MOSFET commonly used in applications such as power management, motor control, DC-DC converters, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for tasks like load switching, high-frequency applications, and amplifying signals in various electronic devices. Additionally, it is often employed in automotive electronics and industrial applications for efficient power handling.

Equivalent

The IRF9310PBF is a N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and AOD6N60. These alternatives have similar voltage and current ratings, but always check the specific datasheets for exact specifications and characteristics to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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