IRF8788TRPBF

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IRF8788TRPBF

MOSFET N-CH 30V 24A 8SO

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 24A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 2.8mOhm @ 24A, 10V
Vgs(th)(Max)@Id 2.35V @ 100µA
GateCharge(Qg)(Max)@Vgs 66 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5720 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SO

Vue d'ensemble

Description

The IRF8788TRPBF is a high-performance N-channel MOSFET designed for various power management applications. It features a low on-resistance (Rds(on)), allowing for efficient conduction with minimal power loss, which makes it suitable for DC-DC converters, power supplies, and motor control systems. The device can handle a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 75A, making it robust for high-current applications.
The IRF8788TRPBF is housed in a TO-220 package, facilitating effective heat dissipation. Its fast switching capabilities enable high-frequency operation, improving overall system efficiency. Additionally, it is RoHS-compliant, indicating it is free from hazardous substances.
Due to its reliability and performance characteristics, the IRF8788TRPBF is widely utilized in automotive, industrial, and consumer electronics applications. Proper thermal management and circuit design considerations are essential to maximize its performance and longevity in practical implementations.

Features

The IRF8788TRPBF is a high-performance N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for medium voltage applications.
2. Current Rating: The device can handle continuous drain current up to 80A at a temperature of 25°C.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.022Ω at V_GS of 10V, which helps reduce power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, allowing for easier drive requirements.
5. Package Type: It comes in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching: The IRF8788TRPBF is optimized for fast switching speeds, making it ideal for high-frequency applications.
Overall, the IRF8788TRPBF is suitable for use in power supplies, motor drives, and other high-efficiency power management systems.

Package

The IRF8788TRPBF is packaged in a TO-220 form factor. This package type is designed for power applications, providing efficient thermal dissipation and ease of mounting on heatsinks.

Pinout

The IRF8788TRPBF is a dual N-channel MOSFET housed in a 8-pin SOIC package. It features a total of 8 pins, with each MOSFET capable of handling high currents and voltages for power management applications.
Pin Functions:
1. Pin 1 (G1): Gate of the first N-channel MOSFET.
2. Pin 2 (S1): Source of the first N-channel MOSFET.
3. Pin 3 (D1): Drain of the first N-channel MOSFET.
4. Pin 4 (D2): Drain of the second N-channel MOSFET.
5. Pin 5 (S2): Source of the second N-channel MOSFET.
6. Pin 6 (G2): Gate of the second N-channel MOSFET.
7. Pin 7 (N/C): No connection.
8. Pin 8 (N/C): No connection.
The device is commonly used in applications such as power supply regulation, motor control, and other switching applications where efficient power management is essential.

Manufacturer

The IRF8788TRPBF is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon is known for providing a wide range of products, including power semiconductors, microcontrollers, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. The company focuses on innovations in energy efficiency, mobility, and security, and plays a significant role in the development of technologies for electric vehicles, renewable energy, and the Internet of Things (IoT). Infineon is headquartered in Neubiberg, Germany, and operates worldwide, emphasizing sustainable technology and advancing digitalization.

Application

The IRF8788TRPBF is a high-performance MOSFET primarily used in power management applications. Its key application areas include synchronous rectification in DC-DC converters, motor control, power supplies, and battery management systems. Additionally, it is suitable for applications requiring high efficiency and fast switching speeds in renewable energy systems and electric vehicles.

Equivalent

The IRF8788TRPBF is a high-voltage, N-channel MOSFET. Equivalent products include the STP12NK60Z, FQP13N60C, and the IXFH22N60P. Ensure to check parameters such as voltage rating, current handling, RDS(on), and package type when selecting an equivalent to match your application requirements.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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