IRF840APBF

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IRF840APBF

MOSFET N-CH 500V 8A TO220AB

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Spécifications

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 850mOhm @ 4.8A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 38 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1018 pF @ 25 V
PowerDissipation(Max) 125W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRF840APBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a voltage rating of 500V, making it suitable for use in power supplies, motor control circuits, and other high-voltage switching applications. With a low on-resistance (R_DS(on)) of approximately 0.8 ohms, it allows for efficient conduction, minimizing power loss during operation.
Key specifications include a maximum continuous drain current (I_D) of 8A and a gate threshold voltage (V_GS(th)) typically ranging from 2 to 4V. The device is housed in a TO-220 package, allowing for effective heat dissipation. The IRF840APBF is known for its robustness and reliability, making it a popular choice in industrial and consumer electronics.
This MOSFET is also compatible with various driving voltages, enabling straightforward integration into different circuit designs. Overall, the IRF840APBF is a versatile component that provides effective control in high-voltage environments.

Features

The IRF840APBF is a N-channel power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage circuits.
2. Current Rating: The continuous drain current (I_D) is up to 8A at a case temperature of 25°C.
3. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient switching control.
4. R_DS(on): It features a low on-resistance of approximately 0.8Ω, which minimizes power loss and heat generation during operation.
5. Fast Switching: The device supports fast switching speeds, ideal for use in PWM applications and power converters.
6. Package: It comes in a TO-220 package, ensuring good thermal performance and ease of heat dissipation.
7. Applications: Commonly used in power supplies, motor drivers, and automotive applications.
Overall, the IRF840APBF is valued for its reliability, efficiency, and versatility in high-power applications.

Package

The IRF840APBF is typically available in a TO-220 package type. This package design allows for efficient heat dissipation and is commonly used in power applications.

Pinout

The IRF840APBF is a power MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin controls the MOSFET's operation. A voltage applied to the gate determines whether the device is in the ON (conducting) or OFF (non-conducting) state.
2. Drain (D) - This is the terminal through which the current flows out of the MOSFET when it is turned ON. It's connected to the load in a circuit.
3. Source (S) - Current enters the MOSFET through this pin. It typically connects to ground or the negative side of the power supply in many applications.
The IRF840APBF is designed for high-voltage applications, handling up to 500V and a continuous drain current of 8A, making it suitable for various switching and amplification tasks in power electronics.

Manufacturer

The IRF840APBF is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. The company is known for its innovations in power management and efficiency, contributing to advancements in energy-saving technologies and smart systems. The "APBF" suffix indicates that the part is lead-free and compliant with environmental regulations.

Application

The IRF840APBF is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its main areas include switching power supplies, motor control, and high-frequency inverters. It is also utilized in audio amplifiers, lighting control circuits, and various industrial applications requiring efficient power management and high-speed switching. Its robust design allows it to handle significant voltage and current loads, making it suitable for demanding environments.

Equivalent

The IRF840APBF is an N-channel MOSFET. Equivalent products include:
1. STP16NF06
2. FQP30N06L
3. MTP50N06
4. IRF540
5. BTA10-400V (for certain applications)
Always verify specifications like voltage, current rating, and package type before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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