IRF8313TRPBF

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IRF8313TRPBF

IRF8313 - HEXFET POWER MOSFET

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Spécifications

Package Bulk
Series HEXFET®
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 9.7A
RdsOn(Max)@IdVgs 15.5mOhm @ 9.7A, 10V
Vgs(th)(Max)@Id 2.35V @ 25µA
GateCharge(Qg)(Max)@Vgs 9nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 760pF @ 15V
Power-Max 2W
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Vue d'ensemble

Description

The IRF8313TRPBF is a N-channel MOSFET designed for use in power management applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of up to 60A, making it suitable for high-efficiency switching applications. Its low on-resistance (R_DS(on)) minimizes power losses during operation, enhancing thermal performance. The MOSFET is housed in a TO-220 package, facilitating efficient heat dissipation.
Key features include fast switching capabilities, which are beneficial for applications such as DC-DC converters, motor drivers, and power supplies. Additionally, the IRF8313TRPBF is RoHS compliant, ensuring it meets environmental regulations.
Overall, this MOSFET is ideal for designers seeking reliable performance in demanding applications while maintaining efficiency and thermal management.

Features

The IRF8313TRPBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
- Voltage Rating: 30V maximum drain-to-source voltage (V_DS).
- Current Rating: Continuous drain current (I_D) of up to 40A.
- On-Resistance: Low on-resistance (R_DS(on)) of approximately 8.0 mΩ at V_GS = 10V, resulting in efficient power handling and minimal heat generation.
- Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)) typically between 1V to 2.5V, allowing for easy drive from low-voltage logic levels.
- Fast Switching Speed: Suitable for applications requiring fast turn-on and turn-off characteristics.
- Package: Available in a TO-220 package, providing good thermal performance and ease of mounting.
- Applications: Ideal for DC-DC converters, motor control, and other power management applications.
Overall, the IRF8313TRPBF is known for its reliability, efficiency, and versatility in power electronic circuits.

Package

The IRF8313TRPBF is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing good thermal performance and ease of mounting.

Pinout

The IRF8313TRPBF is an N-channel MOSFET with a total of 8 pins. It is designed for applications that require efficient switching and low on-resistance. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching on and off.
2. Drain (D) - The output terminal where current flows out when the MOSFET is on.
3. Source (S) - The terminal that connects to the ground or the load.
The package type is typically TO-220 or similar, which supports efficient heat dissipation. The IRF8313TRPBF is suitable for high-speed switching applications and is often used in power management circuits, motor drivers, and DC-DC converters. It features a low R_DS(on) for reduced power loss and improved thermal performance.

Manufacturer

The IRF8313TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in the production of a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovation in power semiconductors and serves various industries, including automotive, communication, and consumer electronics. Infineon focuses on enabling energy efficiency, connectivity, and security in electronic systems.

Application

The IRF8313TRPBF is an N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor drives, and power switching circuits. It is suitable for high-speed switching, enabling efficient control of power in renewable energy systems, electric vehicles, and industrial automation. Its low on-resistance and high thermal stability make it ideal for applications requiring efficient power handling and thermal management.

Equivalent

The IRF8313TRPBF is a N-channel MOSFET. Equivalent products include the NTPF8313, STP16NF06, and SI8305D. Always check specific electrical characteristics such as voltage, current ratings, and gate threshold voltage to ensure compatibility with your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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