IRF830PBF

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IRF830PBF

MOSFET N-CH 500V 4.5A TO220AB

  • Fabricant
  • Mfr. Partie #IRF830PBF
  • Paquet TO-220-3
  • Fiche de données
  • En stock3960

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 4.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.5Ohm @ 2.7A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 38 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 610 pF @ 25 V
PowerDissipation(Max) 74W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRF830PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications. It features a high voltage rating, typically up to 500V, making it suitable for applications such as power supplies, motor drivers, and other high-voltage circuits.
Key specifications include a maximum continuous drain current of around 9.2A and a low on-resistance (RDS(on)) of approximately 0.4 ohms, which helps reduce power losses during operation. The device operates efficiently with fast switching speeds and can be driven with standard logic levels.
The IRF830PBF is packaged in a TO-220 format, making it easy to mount on heatsinks for optimal thermal management. It is also RoHS compliant, indicating it is free from hazardous substances, making it environmentally friendly.
Overall, the IRF830PBF is a versatile component suitable for various applications requiring reliable high-voltage switching capabilities.

Features

The IRF830PBF is an N-channel power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 500V maximum drain-source voltage (V_DS), making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 9.2A, allowing for substantial load handling.
3. Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, enabling efficient switching at lower gate voltages.
4. R_DS(on): Low on-resistance of around 0.33Ω at V_GS = 10V, minimizing conduction losses.
5. Fast Switching: Capable of high-speed operation, beneficial for efficient power conversion.
6. Package: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
7. Applications: Commonly used in power supplies, motor controls, and switching applications.
These attributes make the IRF830PBF an attractive choice for engineers seeking reliable performance in high-voltage environments.

Package

The IRF830PBF is commonly packaged in a TO-220 format, which is a robust, insulated package suitable for high-power applications. It features a metal tab for heatsinking, enhancing thermal management.

Pinout

The IRF830PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This is the control terminal used to turn the MOSFET on or off.
2. Drain (D): This is the terminal through which the current flows to the load when the MOSFET is turned on.
3. Source (S): This is the terminal connected to ground or the negative side of the power supply.
The IRF830PBF is designed for high-speed switching and has applications in power management, switching power supplies, and motor control. It can handle high voltages (up to 500V) and high currents (up to 9.2A), making it suitable for a variety of electronic circuits.

Manufacturer

The IRF830PBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensor technologies. The company serves various industries such as automotive, industrial automation, communication, and consumer electronics. Infineon is known for its focus on innovation and sustainable solutions, particularly in the areas of energy efficiency and automotive safety. The IRF830PBF itself is a power MOSFET designed for high-voltage applications, commonly used in switching power supplies, motor control, and other power management applications.

Application

The IRF830PBF is a high-voltage N-channel MOSFET primarily used in power switching applications. Its application areas include:
1. Power Supplies: Used in DC-DC converters and SMPS (Switch Mode Power Supplies).
2. Motor Control: Employed in motor drive circuits for industrial and automotive applications.
3. Inverters: Utilized in solar inverters and UPS systems.
4. Lighting: Used in LED drivers and electronic ballasts.
5. Switching Regulators: Effective in high-efficiency voltage regulation.
Its high voltage rating makes it suitable for demanding applications.

Equivalent

The IRF830PBF is a power MOSFET with a 500V drain-source voltage rating and a 9A continuous current rating. Equivalent products include:
1. STP8NK50Z - 500V, 8A
2. MSTF500R - 500V, 10A
3. IXFH25N50P - 500V, 25A
Check specific datasheets for detailed specifications and ensure compatibility with your application.

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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