IRF830

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IRF830

MOSFET N-CH 500V 4.5A TO220AB

  • Fabricant
  • Mfr. Partie #IRF830
  • Paquet TO-220-3
  • Fiche de données
  • En stock7505

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Spécifications

Package Tube,Tube
Series PowerMESH™
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 4.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.5Ohm @ 2.7A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 30 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 610 pF @ 25 V
PowerDissipation(Max) 100W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The IRF830 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used for switching and amplification applications in electronic circuits. It features a high voltage rating, capable of withstanding up to 500 volts, and a continuous drain current of approximately 9.2 amps. The IRF830 is characterized by a low on-resistance (R_DS(on)) of about 0.4 ohms, allowing efficient operation with minimal heat generation during conduction.
This MOSFET is designed for high-speed switching applications, making it suitable for use in power supplies, motor drivers, and high-frequency circuits. It operates effectively with a gate threshold voltage between 2 to 4 volts, allowing it to be driven by low-voltage logic levels.
The package typically comes in a TO-220 format, which facilitates heat dissipation. Overall, the IRF830 is a reliable choice for engineers and hobbyists seeking to implement efficient power management solutions in their designs.

Features

The IRF830 is a high-voltage N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 9.2A at 25°C with a maximum of 30A under pulsed conditions.
3. On-Resistance: Low on-resistance (R_DS(on)) of approximately 0.5 ohms, which reduces power loss during operation.
4. Gate Threshold Voltage: V_GS(th) typically between 2-4V, allowing for easy drive with low-voltage logic levels.
5. Package Type: Available in a TO-220 package, facilitating heat dissipation and easy mounting.
6. Fast Switching: Suitable for high-speed switching applications due to its low gate charge.
These features make the IRF830 ideal for use in power supplies, motor drives, and other industrial applications requiring reliable high-voltage switching.

Package

The IRF830 is typically available in a TO-220 package type, which features three leads and is designed for better heat dissipation. This packaging makes it suitable for use in high-power applications, such as in switching and amplifying circuits.

Pinout

The IRF830 is an N-channel power MOSFET commonly used in high-speed switching applications. It typically comes in a TO-220 package, which has three pins.
Pin Configuration:
1. Gate (G) - This pin controls the MOSFET's on/off state by applying a voltage.
2. Drain (D) - The pin where the load is connected; current flows out of this pin when the device is on.
3. Source (S) - This pin is typically connected to ground or the negative side of the power supply.
Function:
- The IRF830 can handle high voltages (up to 500V) and considerable current (up to 9.2A), making it suitable for applications like motor control, power management, and inverters. Its low on-resistance (R_DS(on)) allows for efficient operation, minimizing power loss during conduction.
Always refer to the manufacturer's datasheet for specific electrical characteristics and ratings.

Manufacturer

The IRF830 is manufactured by International Rectifier, a company known for its power management and semiconductor solutions. International Rectifier specializes in designing and producing a wide range of products, including transistors, diodes, and integrated circuits used in various applications such as power supplies, automotive, and renewable energy systems. The company is recognized for its expertise in power electronics and has been a significant player in the semiconductor industry, offering innovative solutions to enhance energy efficiency and performance. In 2015, International Rectifier was acquired by Infineon Technologies, a global leader in semiconductor solutions, further expanding its reach and capabilities in the market.

Application

The IRF830 is an N-channel MOSFET commonly used in power electronics applications, including DC-DC converters, motor drivers, and switching power supplies. It is suitable for high-voltage applications, often found in devices requiring efficient power management, such as industrial equipment, lighting controls, and renewable energy systems like solar inverters. Its high-speed switching capabilities make it ideal for applications that demand rapid on-off control.

Equivalent

The IRF830 is an N-channel MOSFET with a maximum voltage rating of 500V and a continuous drain current rating of 9.2A. Equivalent products include the IRF840, IRF820, and STP16NM50. Other alternatives could be the MRF840 and MTP50N06. Always check specific ratings and characteristics to ensure compatibility for your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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