IRF7855TRPBF

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IRF7855TRPBF

MOSFET N-CH 60V 12A 8SO

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 12A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 9.4mOhm @ 12A, 10V
Vgs(th)(Max)@Id 4.9V @ 100µA
GateCharge(Qg)(Max)@Vgs 39 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1560 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SO

Vue d'ensemble

Description

The IRF7855TRPBF is a N-channel MOSFET designed for high-efficiency power applications. It features low on-resistance and high-speed switching capabilities, making it suitable for use in power management systems, DC-DC converters, and motor drivers. With a maximum drain-source voltage of 55V and a continuous drain current rating of 40A, it can handle significant power loads while maintaining thermal stability.
This MOSFET is characterized by a low gate threshold voltage, allowing for easy drive with low-voltage control signals. Its robust construction and thermal properties enable reliable operation in demanding environments. The IRF7855TRPBF is available in a TO-220 package, facilitating effective heat dissipation during operation.
Ideal for applications in automotive, industrial, and consumer electronics, it enhances energy efficiency and reduces system costs. Its reliability and performance make it a popular choice among engineers and designers in the power electronics field.

Features

The IRF7855TRPBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Maximum V_DS of 55V, suitable for various power applications.
2. Current Rating: Continuous current capability of approximately 70A, enabling high-load applications.
3. R_DS(on): Low on-resistance (around 10 mΩ at V_GS = 10V) for reduced conduction losses and improved efficiency.
4. Gate Threshold Voltage: V_GS(th) typically between 1V to 2.5V, allowing for easy drive by low-voltage circuits.
5. Fast Switching: Optimized for high-speed switching applications, enhancing overall system performance.
6. Package: Available in DPAK or TO-220 packages, facilitating thermal management and ease of handling.
7. Applications: Commonly used in power supplies, DC-DC converters, motor controls, and other power management circuits.
This MOSFET is engineered for robust performance in demanding environments, making it ideal for both industrial and consumer electronics.

Package

The IRF7855TRPBF is packaged in a TO-220 form factor, which is a type of metal package commonly used for power MOSFETs. This design provides effective heat dissipation and allows for easier mounting on heatsinks.

Pinout

The IRF7855TRPBF is a N-channel MOSFET with a pin count of 8. This device is designed for high-efficiency applications and features the following key pin functions:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the load is connected; current flows out of this pin when the MOSFET is on.
3. Source (S): Connects to ground or the negative side of the circuit; current flows into this pin when the MOSFET is in the on state.
4. Body Diode: Integrated within the MOSFET structure, allowing current to flow from Source to Drain when the MOSFET is off, in case of a reverse voltage condition.
The IRF7855TRPBF features low on-resistance, fast switching speeds, and is suitable for applications such as power management, motor control, and DC-DC converters. It has a maximum drain-to-source voltage (V_DS) of 55V and a maximum continuous drain current (I_D) of 60A.

Manufacturer

The manufacturer of the IRF7855TRPBF is Infineon Technologies. Infineon is a leading semiconductor company based in Germany that specializes in developing innovative solutions in the fields of power management, automotive, industrial, and security technologies. The company produces a wide range of products, including power MOSFETs, microcontrollers, sensors, and security controllers, catering to various industries such as automotive, industrial automation, and consumer electronics. Infineon is known for its commitment to sustainability and efficiency in electronic components, contributing to advancements in energy conservation and smart technologies.

Application

The IRF7855TRPBF is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drives, and power switching circuits. It is suitable for high-efficiency power supplies, renewable energy systems, and electric vehicles due to its low on-resistance and fast switching capabilities. Additionally, it's employed in industrial and consumer electronics for load switching and signal amplification.

Equivalent

The IRF7855TRPBF is an N-channel MOSFET. Equivalent products include the STP75NF75, FQP75N75, and BSS139. Always check the specific parameters like voltage, current ratings, and RDS(on) to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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