IRF7842PBF

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IRF7842PBF

MOSFET N-CH 40V 18A 8SO

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Spécifications

Series HEXFET®
Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 20 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

Vue d'ensemble

Description

The IRF7842PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It is produced by Infineon Technologies and features a N-channel configuration, capable of handling high voltage and current levels, making it suitable for power management in various electronic circuits.
Key specifications include a maximum drain-source voltage (V_DS) of 40V, a continuous drain current (I_D) of up to 80A, and a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation. The device is optimized for fast switching speeds, making it ideal for applications such as DC-DC converters, motor drives, and power supplies.
The IRF7842PBF is also characterized by its thermal stability and reliability, with a robust package design that aids in heat dissipation. Its lead-free construction aligns with environmental standards, making it suitable for modern electronic designs. Overall, the IRF7842PBF is a versatile component for engineers looking to improve the performance of power electronics systems.

Features

The IRF7842PBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) up to 80A, suitable for high-load conditions.
3. R_DS(on): Low on-resistance (R_DS(on)) of approximately 7.2 mΩ at V_GS = 10V, enabling reduced power loss and improved thermal performance.
4. Gate Threshold Voltage: V_GS(th) in the range of 1V to 3V, allowing for easy drive with low-voltage control signals.
5. Fast Switching: High-speed switching capabilities suitable for applications in DC-DC converters and motor drives.
6. Package: Available in a TO-220 package, facilitating effective heat dissipation.
These features make the IRF7842PBF ideal for applications in power management, automotive systems, and renewable energy systems.

Package

The IRF7842PBF is available in a TO-220 package type, which is designed for high-power applications. This package provides good thermal performance and ease of mounting to heat sinks.

Pinout

The IRF7842PBF is a N-channel MOSFET commonly used in power management applications. It features a TO-220 package, which has a total of three pins. The pin configuration is as follows:
1. Gate (G) - This pin controls the MOSFET's switching. A voltage applied to the gate turns the device on or off.

2. Drain (D) - This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is typically connected to ground or the negative side of the power supply. Current flows from the source to the drain when the MOSFET is activated.
The IRF7842PBF is known for its low R_DS(on) and fast switching capabilities, making it suitable for applications like DC-DC converters, motor control, and other high-efficiency power management solutions.

Manufacturer

The IRF7842PBF is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in the design and production of a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. The company focuses on innovation and sustainability and serves various industries such as automotive, industrial, and consumer electronics. Infineon is recognized for its expertise in power semiconductors, which are essential for efficient energy management and conversion in electronic devices.

Application

The IRF7842PBF is an N-channel MOSFET commonly used in power applications, including DC-DC converters, power management systems, motor drives, and inverter circuits. Its features make it suitable for high-efficiency and high-frequency switching applications in renewable energy systems, electric vehicles, and UPS systems. Additionally, it can be utilized in power supplies and various consumer electronics requiring efficient power control.

Equivalent

The IRF7842PBF is a N-channel MOSFET. Equivalent products include:
1. STP16NF06 - STMicroelectronics
2. FQP30N06L - On Semiconductor
3. BSS126 - Vishay
4. IRF3205 - International Rectifier
5. AOD4184 - AOS Technologies
Always verify specifications such as voltage, current ratings, and package types for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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