IRF7832TRPBF

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IRF7832TRPBF

MOSFET N-CH 30V 20A 8SO

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 20A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 4mOhm @ 20A, 10V
Vgs(th)(Max)@Id 2.32V @ 250µA
GateCharge(Qg)(Max)@Vgs 51 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4310 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 155°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SO

Vue d'ensemble

Description

The IRF7832TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. It features a low on-resistance (RDS(on)) of approximately 6.5 mΩ, enabling minimal conduction losses, making it suitable for high-current applications. With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 85A, this MOSFET is ideal for use in power supplies, motor drivers, and other switching applications.
The IRF7832TRPBF also integrates a fast switching speed, allowing for efficient operation in high-frequency circuits. Its package, typically offered in a TO-220 or similar format, ensures good thermal performance and easy mounting. The device is RoHS-compliant, reflecting a commitment to environmental safety.
Overall, the IRF7832TRPBF is a versatile component that combines high power capability with efficiency, making it suitable for various applications in consumer electronics, industrial machinery, and renewable energy systems.

Features

The IRF7832TRPBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-to-medium voltage applications.
2. Current Rating: It can handle a continuous drain current (Id) of up to 50A, allowing it to manage significant power loads.
3. Rds(on): The on-resistance is low (approximately 2.5 mΩ at Vgs=10V), which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage (Vgs(th)): The gate threshold is around 1.5V to 3V, allowing it to be driven by low-voltage control signals.
5. Package: It comes in a TO-220 package, providing excellent thermal performance and ease of heat dissipation.
6. Fast Switching: Suitable for fast switching applications, enhancing overall efficiency in power management circuits.
These features make the IRF7832TRPBF ideal for use in DC-DC converters, motor drives, and other power switching applications.

Package

The IRF7832TRPBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation, making it suitable for high-power applications.

Pinout

The IRF7832TRPBF is a N-channel MOSFET with a total of 8 pins. Its primary function is to act as an electronic switch or amplifier in various electronic circuits, particularly in power management and motor control applications. The main pins include:
1. Gate (G) - Controls the ON/OFF state of the MOSFET.
2. Drain (D) - The terminal through which current flows out when the device is ON.
3. Source (S) - The terminal through which current enters when the device is ON.
4. Body Diode - Integrated parasitic diode between Drain and Source, conducting in the reverse direction.
The IRF7832TRPBF is designed to handle high voltage and current, making it suitable for applications requiring low on-resistance and fast switching capabilities. Its typical maximum ratings include a drain-source voltage of 100V and a continuous drain current of 50A.

Manufacturer

The IRF7832TRPBF is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in manufacturing a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company is known for its focus on innovation in areas such as energy efficiency, mobility, and security. Infineon's products are widely used in various applications, including industrial, automotive, and consumer electronics, making it a key player in the semiconductor industry.

Application

The IRF7832TRPBF is a N-channel MOSFET primarily used in applications such as power management, motor control, and DC-DC converters. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching speed. Common areas include automotive, renewable energy systems, and consumer electronics, where energy efficiency and thermal performance are critical.

Equivalent

The IRF7832TRPBF is an N-channel MOSFET. Equivalent products include the STP75NF75, FDS6682, and AUIRF7832. Always verify specifications such as voltage, current, and RDS(on) to ensure compatibility for your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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