IRF7809AV

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IRF7809AV

MOSFET N-CH 30V 13.3A 8SO

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Spécifications

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 13.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 3780 pF @ 16 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

Vue d'ensemble

Description

The IRF7809AV is a high-voltage N-channel MOSFET designed for use in power applications. It features a maximum drain-source voltage (V_DS) of 900V, making it suitable for high-voltage switching applications. The device offers a low on-resistance (R_DS(on)) which enhances its efficiency, reducing power losses during operation. With a continuous drain current rating of up to 7A, it can handle substantial loads in various circuits.
Key characteristics include a threshold voltage (V_GS(th)) ranging from 2V to 4V, ensuring it can be easily driven by standard logic levels. The IRF7809AV is commonly used in applications such as power supplies, motor drives, and inverters, particularly in renewable energy systems and industrial automation.
Its robust construction and thermal performance allow for reliable operation over a wide temperature range. When integrating this MOSFET into designs, proper thermal management and circuitry considerations are essential to maximize its performance and longevity.

Features

The IRF7809AV is a N-channel MOSFET designed for high-power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 90V, making it suitable for a variety of high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 28A, allowing it to manage significant loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) typically around 0.1 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The IRF7809AV is designed for fast switching speeds, facilitating efficient operation in high-frequency applications.
5. Thermal Performance: It includes a robust thermal resistance rating, enabling it to dissipate heat effectively during operation.
6. Package: The device is available in a TO-220 package, which allows for easy mounting and good thermal management.
These features make the IRF7809AV suitable for use in power supplies, motor control, and other high-performance electronic applications.

Package

The IRF7809AV is typically packaged in a TO-220 format, which is a metal tabbed package designed for power applications, allowing for better heat dissipation and suitable for mounting on heat sinks.

Pinout

The IRF7809AV is a high-voltage N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow between the Drain and Source.
2. Drain (D): This is the terminal through which the load current flows. It connects to the load in the circuit.
3. Source (S): This pin is connected to ground or the negative side of the power supply, completing the circuit.
The IRF7809AV is designed for applications requiring high voltage and current handling, often used in switching and amplification applications. Its specifications allow for efficient switching with low on-resistance, making it suitable for power management solutions.

Manufacturer

The IRF7809AV is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in providing a wide range of products including power semiconductors, microcontrollers, sensors, and automotive components. The company focuses on automotive, industrial power control, and security applications, making it a key player in the electronics industry. Infineon is known for its innovation and contributions to efficient energy management and advanced technology solutions.

Application

The IRF7809AV is a high-voltage N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drives, and switch-mode power supplies. Its features make it suitable for energy-efficient designs in industrial equipment, renewable energy systems, and electric vehicles. Additionally, it can be used in high-speed switching applications due to its fast switching capabilities and low on-resistance.

Equivalent

The IRF7809AV is a high-voltage, N-channel MOSFET. Equivalent products include the IRF7809, STP11NK90Z, MOTF1F90, and FQP13N90. Ensure to check specifications like voltage, current, and RDS(on) for compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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