IRF7807ZTRPBF

Les images sont à titre de référence seulement

IRF7807ZTRPBF

MOSFET N-CH 30V 11A 8SO

  • Fabricant
  • Mfr. Partie #IRF7807ZTRPBF
  • Paquet
  • Fiche de données
  • En stock3289

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number IRF7807

Vue d'ensemble

Description

The IRF7807ZTRPBF is an N-channel MOSFET designed for high-efficiency power switching applications. It features a low on-resistance (R_DS(on)) and a high maximum drain-source voltage (V_DS), making it suitable for various applications, including power management, DC-DC converters, and motor drivers.
Key specifications include a maximum continuous drain current (I_D) of up to 50A, a V_DS rating of 75V, and a threshold voltage (V_GS(th)) typically around 2-4V, which allows for easy driving with standard logic-level signals. Its fast switching capabilities reduce power loss, improving overall efficiency.
The device is packaged in a TO-220 form factor, providing robust thermal performance suitable for dissipating heat in demanding applications. It is also RoHS compliant, ensuring it meets environmental standards. Overall, the IRF7807ZTRPBF is a reliable choice for engineers seeking high-performance MOSFETs in their designs.

Features

The IRF7807ZTRPBF is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) up to 80A, making it suitable for high-current applications.
3. RDS(on): Low on-resistance (typically around 5.5 mΩ at VGS = 10V), which minimizes power loss during operation.
4. Gate Threshold Voltage: VGS(th) typically between 1V to 3V, enabling efficient switching.
5. Fast Switching Speed: Designed for rapid turn-on and turn-off, facilitating high-frequency operation.
6. Package Type: Available in a TO-220 package, providing good thermal performance and ease of mounting.
7. Applications: Suitable for DC-DC converters, motor control, and power management systems.
Overall, the IRF7807ZTRPBF is ideal for applications requiring robust performance and efficiency in switch-mode power supplies.

Package

The IRF7807ZTRPBF is packaged in a SO-8 (Small Outline 8-lead) surface-mount package.

Pinout

The IRF7807ZTRPBF is a N-channel MOSFET with a total of 6 pins. Its primary functions include:
1. Gate (G): Pin 1 - Controls the MOSFET's switching; applies voltage to turn the device on/off.
2. Drain (D): Pin 2 - The terminal where the current exits the MOSFET; connected to the load.
3. Source (S): Pin 3 - The terminal where current enters the MOSFET; typically connected to ground or the negative side of the power supply.
The IRF7807ZTRPBF is designed for high-efficiency switching applications such as power management, motor control, and DC-DC converters, enabling low on-resistance and fast switching times. Its specifications make it suitable for automotive and industrial applications.

Manufacturer

The IRF7807ZTRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in automotive, industrial, and security applications, producing a wide range of products including power semiconductors, microcontrollers, and sensors. Infineon focuses on innovation in areas such as energy efficiency, mobility, and the Internet of Things (IoT). With a strong emphasis on sustainable technologies, it plays a significant role in the development of solutions for a connected and energy-efficient future.

Application

The IRF7807ZTRPBF is a N-channel MOSFET used primarily in power management applications. Its application areas include DC-DC converters, motor drives, and power inverters. It is suitable for high-efficiency switching applications, load switching, and as a switch in various electronic circuits, particularly in automotive and industrial systems due to its high voltage and current handling capabilities.

Equivalent

The IRF7807ZTRPBF is a N-channel MOSFET. Equivalent products include the STP75NF75, BSS138, and FQP30N06L. Ensure specifications like voltage, current ratings, and package type match your application needs when selecting an alternative.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire