IRF7769L1TRPBF

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IRF7769L1TRPBF

MOSFET N-CH 100V 20A DIRECTFET

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 20A (Ta), 124A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3.5mOhm @ 74A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 300 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 11560 pF @ 25 V
PowerDissipation(Max) 3.3W (Ta), 125W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DirectFET™ Isometric L8

Vue d'ensemble

Description

The IRF7769L1TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. It features a low on-resistance (RDS(on)) which minimizes conduction losses, making it suitable for switching applications in power supplies, motor drives, and DC-DC converters.
Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of up to 75A, and a maximum gate-source voltage (VGS) of ±20V. Its fast switching capabilities enable efficient operation in high-frequency applications. The device is housed in a compact TO-220 package, facilitating easy thermal management and heat dissipation.
Additionally, the IRF7769L1TRPBF is RoHS compliant, ensuring it meets stringent environmental standards. Its robust performance and reliability make it a popular choice for engineers in automotive, industrial, and consumer electronics applications. Overall, the IRF7769L1TRPBF provides an efficient solution for modern power management challenges.

Features

The IRF7769L1TRPBF is a high-performance N-channel MOSFET designed for various applications, such as power management and switching. Its key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Rating: Capable of handling continuous drain currents (I_D) up to 60A, making it suitable for high-power applications.
3. Low R_DS(on): Features a low on-resistance (R_DS(on)) of approximately 8.5 mΩ at a gate-source voltage (V_GS) of 10V, enhancing efficiency by reducing power losses.
4. Fast Switching Speed: Offers fast switching capabilities, which enable higher efficiency in switching power supplies and converters.
5. Thermal Performance: Rated for high thermal performance with a low thermal resistance.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
Overall, the IRF7769L1TRPBF is ideal for applications requiring efficient switching and high reliability.

Package

The IRF7769L1TRPBF is packaged in a TO-220 format, which is a metal case package providing efficient heat dissipation and robust performance suitable for power applications.

Pinout

The IRF7769L1TRPBF is a Power MOSFET with a total of 8 pins. Its primary function is to serve as a high-side switch in power management applications. The main pin functions are as follows:
1. Gate (G): Controls the switching on and off of the MOSFET.
2. Drain (D): Connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S): Connects to ground or the lower potential side; current flows into the source when the MOSFET is on.
4. Body Diode: Provides a path for current when the MOSFET is off, protecting against reverse current.
The IRF7769L1TRPBF is designed for high efficiency and low on-resistance, making it suitable for various applications including DC-DC converters, motor drivers, and power management systems.

Manufacturer

The IRF7769L1TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in power semiconductors, microcontrollers, sensors, and automotive electronics. Infineon focuses on providing solutions for various sectors, including automotive, industrial, and communication technologies. Their products are widely used in applications such as energy efficiency, electric mobility, and the Internet of Things (IoT). As a leader in the semiconductor industry, Infineon emphasizes innovation and sustainability in its offerings.

Application

The IRF7769L1TRPBF is a high-performance N-channel MOSFET primarily used in applications such as DC-DC converters, motor drives, power management systems, and synchronous rectification. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies, electric vehicles, and renewable energy systems.

Equivalent

The IRF7769L1TRPBF is a specific N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and BSS138. When substituting, ensure that the voltage, current ratings, and package type match your application requirements. Always check the datasheets for precise specifications.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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