IRF7503TRPBF

Les images sont à titre de référence seulement

IRF7503TRPBF

MOSFET 2N-CH 30V 2.4A MICRO8

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Series HEXFET®
Part Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.4A
Rds On (Max) @ Id, Vgs 135mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 25V
Power - Max 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package Micro8™
Base Product Number IRF7503

Vue d'ensemble

Description

The IRF7503TRPBF is a N-channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) rating of 58A, making it suitable for power management in various electronic circuits. The device boasts a low on-resistance (Rds(on)) of approximately 9.5 mΩ, which minimizes power loss and enhances thermal performance.
It is commonly used in power supplies, DC-DC converters, and motor drivers due to its fast switching capabilities and high reliability. The IRF7503TRPBF is housed in a TO-220 package, facilitating easy thermal management and heat dissipation.
Additionally, the "TRPBF" suffix indicates that the device is RoHS compliant, ensuring it meets environmental standards by being free from hazardous substances. Overall, the IRF7503TRPBF is an effective choice for designers seeking to optimize efficiency in power electronics applications.

Features

The IRF7503TRPBF is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
- Voltage Rating: 30V drain-to-source (Vds) maximum, suitable for low-voltage applications.
- Continuous Drain Current: Up to 62A, allowing for significant load handling.
- RDS(on): Low on-resistance of approximately 7.5 mΩ at a gate voltage (Vgs) of 10V, enhancing efficiency and reducing power losses.
- Gate Threshold Voltage: Typically between 2V to 4V, enabling easy drive from logic-level signals.
- Package: Available in a TO-220 or DPAK package for versatile mounting options.
- Fast Switching: High-speed switching performance, making it suitable for applications like DC-DC converters and motor drives.
- Body Diode: Integrated, with low reverse recovery time for improved performance in synchronous rectification.
Overall, the IRF7503TRPBF is ideal for energy-efficient designs in power management, automotive, and industrial applications.

Package

The IRF7503TRPBF is typically packaged in a TO-220 form factor. This package type is designed for efficient thermal performance and is commonly used for power MOSFETs in various applications.

Pinout

The IRF7503TRPBF is a N-channel MOSFET with a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET; applies voltage to turn it on/off.
2. Drain (D) - The output terminal where current flows to the load.
3. Source (S) - The terminal through which current enters the MOSFET from the power supply.
The device is designed for high-speed switching applications and has a low on-resistance, making it suitable for power management in various electronic circuits. It is commonly used in applications such as power supplies, motor controls, and DC-DC converters.
For detailed specifications, refer to the manufacturer's datasheet.

Manufacturer

The IRF7503TRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in semiconductor solutions for automotive, industrial, and multimarket applications. The company is known for its high-performance products, including power semiconductors, microcontrollers, and sensors, which are utilized in various sectors such as automotive, industrial automation, and smart energy. Infineon focuses on innovation and sustainability, contributing to advancements in energy efficiency and technology integration across multiple industries.

Application

The IRF7503TRPBF is a N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, motor drives, power inverters, and switching power supplies. It is also utilized in automotive systems, LED drivers, and other high-efficiency switching applications due to its low on-resistance and fast switching capabilities.

Equivalent

The IRF7503TRPBF is an N-channel MOSFET. Equivalent products include:
1. BSC093N04LS
2. STP75NF75
3. FDS6682
4. SI7430DP
5. FDP8880
Always check the specifications for voltage, current ratings, and package type to ensure compatibility.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire