IRF7469TRPBF

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IRF7469TRPBF

MOSFET N-CH 40V 9A 8SO

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Spécifications

Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 20 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number IRF7469

Vue d'ensemble

Description

The IRF7469TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. With a low on-resistance (RDS(on)), it delivers efficient performance, making it suitable for power management, DC-DC converters, and motor control applications. This device features a high voltage rating, typically around 55V, and can handle significant current, often up to 40A, depending on specific conditions.
The IRF7469TRPBF is available in a TO-220 package, facilitating heat dissipation and making it easy to integrate into various circuit designs. Its gate threshold voltage is designed to allow for compatibility with standard logic levels, enabling efficient drive circuitry. The device is also RoHS compliant, ensuring it meets environmental regulations.
In summary, the IRF7469TRPBF is recognized for its reliability, efficiency, and versatility in modern electronic applications, making it a popular choice among engineers and designers.

Features

The IRF7469TRPBF is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (VDS) of 55V.
2. Continuous Drain Current: Capable of handling up to 30A, allowing it to manage significant load currents.
3. RDS(on): Low on-resistance (typically around 0.037Ω at VGS = 10V), which minimizes power loss and improves thermal performance.
4. Gate Threshold Voltage: VGS(th) is between 2V and 4V, facilitating efficient operation in low-voltage applications.
5. Fast Switching Speed: Suitable for high-frequency applications, enhancing overall system performance.
6. Package Type: Available in a TO-220 package, providing effective thermal dissipation.
7. Applications: Ideal for power management, DC-DC converters, and motor control.
These features make the IRF7469TRPBF a versatile choice for a variety of power electronics applications.

Package

The IRF7469TRPBF is packaged in a TO-220 casing. This package type is designed for efficient thermal management and is commonly used for power MOSFETs, providing a robust solution for high-current applications.

Pinout

The IRF7469TRPBF is a dual N-channel MOSFET in a surface-mount package, specifically the SO-8 package, which has a total of 8 pins.
Pin Configuration and Functions:
1. Gate1 (G1) - Controls the first N-channel MOSFET.
2. Drain1 (D1) - Drain terminal for the first MOSFET.
3. Source1 (S1) - Source terminal for the first MOSFET.
4. Gate2 (G2) - Controls the second N-channel MOSFET.
5. Drain2 (D2) - Drain terminal for the second MOSFET.
6. Source2 (S2) - Source terminal for the second MOSFET.
7. Common Source (CS) - Connects the sources of both MOSFETs, typically to ground.
8. No Connect (NC) - Not connected internally.
The IRF7469TRPBF is commonly used in power management and switching applications due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The IRF7469TRPBF is manufactured by Infineon Technologies AG. Infineon is a semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. Infineon is known for its innovations in power management, semiconductor technologies, and products that enhance energy efficiency and safety in electronic devices. They are a key player in the global semiconductor industry, focusing on areas such as power semiconductors, microcontrollers, and integrated circuits.

Application

The IRF7469TRPBF is a N-channel MOSFET used primarily in power management applications, including DC-DC converters, power supply circuits, motor drivers, and switching applications. It is suitable for high-efficiency designs due to its low on-resistance and fast switching capabilities, making it ideal for renewable energy systems, electric vehicles, and industrial automation.

Equivalent

The IRF7469TRPBF is a dual N-channel MOSFET. Equivalent products include:
1. BSS123 - Suitable for low-voltage applications.
2. IRF740 - Similar specifications for higher voltage.
3. FQP30N06L - A comparable N-channel MOSFET with similar ratings.
4. STP16NF06 - Another alternative with compatible specifications.
Always verify specifications such as voltage, current rating, and package type before substitution.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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