IRF7465TRPBF

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IRF7465TRPBF

MOSFET N-CH 150V 1.9A 8SO

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Spécifications

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 1.9A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 280mOhm @ 1.14A, 10V
Vgs(th)(Max)@Id 5.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 330 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SO

Vue d'ensemble

Description

The IRF7465TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a low on-resistance (RDS(on)), which minimizes power losses and enhances thermal performance, making it suitable for applications such as power management, motor control, and DC-DC converters.
Key specifications include a maximum drain-source voltage (VDS) of 55V and a continuous drain current (ID) of up to 50A, enabling it to handle significant power levels. The device is available in a TO-220 package, providing efficient heat dissipation.
The IRF7465TRPBF is particularly advantageous for designers seeking to optimize energy efficiency and thermal management in their circuits. With its fast switching speeds, it is also well-suited for high-frequency applications.
Overall, the IRF7465TRPBF is a reliable choice for various power applications that demand efficiency and performance.

Features

The IRF7465TRPBF is an N-channel MOSFET designed for high efficiency in power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 65V, enabling it to handle various power supply designs.
2. Current Rating: The continuous drain current (I_D) is rated up to 50A, making it suitable for high-current applications.
3. R_DS(on): It offers a low on-resistance of approximately 10 mΩ at a gate-source voltage (V_GS) of 10V, leading to lower conduction losses.
4. Fast Switching: The device is optimized for fast switching times, enhancing efficiency in switching applications.
5. Package: It is available in a TO-220 package, facilitating easy thermal management.
6. Gate Threshold Voltage: The typical gate threshold voltage ranges from 2V to 4V, allowing for compatibility with low-voltage driving circuits.
Overall, the IRF7465TRPBF is suitable for use in DC-DC converters, motor drivers, and other high-power applications where efficiency is critical.

Package

The IRF7465TRPBF is packaged in a TO-220 type package. This package is designed for efficient heat dissipation and is commonly used for high-power applications in electronic circuits.

Pinout

The IRF7465TRPBF is an N-channel MOSFET from Infineon. It features a TO-220 package with a total of three pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow between the Drain and Source.
2. Drain (D) - This pin is where the current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S) - This pin serves as the return path for the current flowing through the MOSFET, typically connected to ground in an N-channel configuration.
The IRF7465TRPBF is designed for applications requiring efficient switching, high-speed operation, and low on-resistance.

Manufacturer

The IRF7465TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in power semiconductors, microcontrollers, sensors, and other electronic components. The company serves various industries, including automotive, industrial, and consumer electronics. Infineon is known for its focus on innovation and energy efficiency, providing solutions for applications such as electric vehicles, renewable energy, and Internet of Things (IoT) devices.

Application

The IRF7465TRPBF is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor control, and power switching. Its high efficiency and fast switching capabilities make it suitable for applications in power supplies, battery management systems, and renewable energy systems. Additionally, it can be used in automotive applications and industrial automation for controlling loads and enhancing energy efficiency.

Equivalent

The IRF7465TRPBF is an N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and AOD5N60. Verify specifications like voltage, current, RDS(on), and package type to ensure compatibility in your application. Always consult datasheets for the most accurate comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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