IRF7451TRPBF

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IRF7451TRPBF

MOSFET N-CH 150V 3.6A 8SO

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Spécifications

Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 990 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number IRF7451

Vue d'ensemble

Description

The IRF7451TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. It features a low on-resistance (R_DS(on)) of approximately 5.5 mΩ, allowing for minimal power loss and improved thermal performance in switching applications. The device is rated for a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 60A, making it suitable for various applications, including DC-DC converters, motor drives, and power supply circuits.
The MOSFET is housed in a TO-220 package, which provides good thermal dissipation properties, facilitating the handling of higher power levels. Its fast switching speeds contribute to high-frequency operation, enhancing overall system efficiency. The IRF7451TRPBF is also RoHS compliant, ensuring it meets environmental standards for hazardous substances.
In summary, the IRF7451TRPBF is ideal for applications requiring efficient power switching, reliability, and thermal performance in a compact package.

Features

The IRF7451TRPBF is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 55V.
2. Current Rating: Continuous drain current (I_D) is up to 50A, suitable for high-power applications.
3. R_DS(on): Low on-resistance (typically around 10 mΩ), which reduces conduction losses and enhances efficiency.
4. Gate Threshold Voltage: V_GS(th) is between 2V and 4V, allowing for easy driving with standard logic levels.
5. Package: Available in a SO-8 package, providing a compact footprint for space-constrained designs.
6. Fast Switching: Optimized for fast switching applications, suitable for use in DC-DC converters, motor drivers, and power management systems.
7. Thermal Performance: Features improved thermal performance, allowing for effective heat dissipation.
These characteristics make the IRF7451TRPBF suitable for various applications in automotive, industrial, and consumer electronics.

Package

The IRF7451TRPBF is packaged in a TO-220 style. This package type provides good thermal performance and is suitable for high-power applications, allowing for efficient heat dissipation.

Pinout

The IRF7451TRPBF is a N-channel MOSFET from Infineon Technologies. It comes in a TO-220 package, which typically has three pins.
Pin Configuration:
1. Gate (G) - This pin is used to control the switching of the MOSFET. Applying a voltage to the gate creates an electric field that allows current to flow between the drain and source.
2. Drain (D) - This pin is where the load is connected. It allows current to enter the MOSFET when it is in the 'on' state.
3. Source (S) - This pin is connected to the ground or negative terminal of the power supply.
Function:
The IRF7451TRPBF is designed for high-speed switching and has applications in power management, motor control, and other electronic devices requiring efficient power handling and minimal loss.
Make sure to refer to the specific datasheet for detailed electrical characteristics and ratings.

Manufacturer

The manufacturer of the IRF7451TRPBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in various sectors including automotive, industrial power control, and digital security. The company designs and produces a wide range of semiconductor products, such as power management ICs, microcontrollers, and sensors, catering to diverse applications in electronics. Infineon is known for its focus on innovation and technology, aiming to enable a more connected and sustainable world through its semiconductor solutions.

Application

The IRF7451TRPBF is a N-channel MOSFET primarily used in applications such as DC-DC converters, power management systems, motor control, and load switching. Its low on-resistance and high-speed switching capabilities make it suitable for high-efficiency power supplies and battery management systems. It is also utilized in automotive applications and renewable energy systems, such as solar inverters and electric vehicle chargers.

Equivalent

The IRF7451TRPBF is an N-channel MOSFET. Equivalent products include the STP16NF06, PSMN2R8-80BS, and AUIRF7451. When selecting alternatives, ensure they match in key specifications such as voltage rating, current rating, Rds(on), and package type. Always refer to the datasheet for detailed comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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